HY29F080 Hynix Semiconductor, HY29F080 Datasheet - Page 34

• Manufacturer Part Number: HY29F080
• Description: 8 Megabit (1M X 8), 5 Volt-only, Flash Memory
• Manufacturer: Hynix Semiconductor

HY29F080
AC CHARACTERISTICS
Addresses
Notes:
1.
2.
3. Word mode addressing shown.
4. RESET# shown only to illustrate t
34
RESET#
RY/BY#
PA = program address, PD = program data, VA = Valid Address for reading program or erase status (see Write
Operation Status section), D
Illustration shows the last two cycles of the program or erase command sequence and the last status read cycle.
command sequence.
W E #
Data
O E #
C E #
t
G H E L
t
W S
t
R H
0x555 for Program
Figure 23. Alternate CE# Controlled Write Operation Timings
0x2AA for Erase
t
t
D S
W C
0xA0 for Program
t
0x55 for Erase
C P
OUT
= array data read at VA.
t
t
W H
C P H
t
D H
0x555 for Chip Erase
RH
SA for Sector Erase
t
A S
PA for Program
measurement references. It cannot occur as shown during a valid
0x30 for Sector Erase
0x10 for Chip Erase
PD for Program
t
A H
t
W H W H 1
t
B U S Y
or t
W H W H 2
or t
W H W H 3
Status
V A
D
O U T
Rev. 6.1/May 01