MCIMX25 Motorola Semiconductor Products, MCIMX25 Datasheet - Page 18

• Manufacturer Part Number: MCIMX25
• Manufacturer: Motorola Semiconductor Products

3.4.1.1
Table 13
1.8V ( 5%) applications.
Note:
1. Simulation circuit for parameters Voh and Vol for I/O cells is below
2. Minimum condition: BCS model, 1.95 V, and –40 °C. Typical condition: typical model, 1.8 V, and 25 °C. Maximum condition:
3. Typical condition: typical model, 1.8 V, and 25 °C. Maximum condition: BCS model, 1.95 V, and 105 °C.
18
High-level output voltage
Low-level output voltage
High-level DC CMOS input voltage
Low-level DC CMOS input voltage
Differential receiver VTH+
Differential receiver VTH-
Input current (no pull-up/down)
High-impedance I/O supply current
High-impedance core supply current
High-level output current
Low-level output current
wcs model, 1.65 V, and 105 °C.
DC Electrical Characteristics
shows the I/O parameters for mobile DDR. These settings are suitable for mDDR and DDR2
DDR_TYPE = 00 Standard Setting DDR I/O DC Parameters
i.MX25 Applications Processor for Consumer and Industrial Products, Rev. 2
Table 13. Mobile DDR I/O DC Electrical Characteristics
Icc-ovdd
Symbol
Icc-vddi
VTH+
VTH-
Voh
VIH
VIL
Vol
Ioh
IIN
Iol
I
I
Test Conditions
VI = OVDD or 0
I
I
Standard Drive
Standard Drive
VI = VDD or 0
OH
OL
I
Voh = 0.8
VI = OVDD
Max. Drive
Vol = 0.2
Max. Drive
OH
I
High Drive
High Drive
OL
OVDDV
OVDDV
= Specified
= Specified
VI = 0
Drive
Drive
= –1mA
= 1mA
—
—
—
OVDD – 0.08
0.8
0.7
–10.8
–100
Min.
–3.6
–7.2
10.8
–0.3
3.6
7.2
—
—
—
—
OVDD
OVDD
OVDD
Typ.
—
—
—
—
—
—
—
—
—
0
0.2
0.3
OVDD+0.3
Max.
1220
0.08
100
990
110
60
—
—
—
—
Freescale Semiconductor
OVDD
OVDD
Units
mA
mA
mV
mV
nA
nA
nA
V
V
V
V
Notes
2, 3
2, 3
—
—
—
1