KSZ8041 Hynix Semiconductor, KSZ8041 Datasheet - Page 20
KSZ8041
Manufacturer Part Number
KSZ8041
Description
Manufacturer
Hynix Semiconductor
Datasheet
1.KSZ8041.pdf
(33 pages)
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Rev. 0.04 /Jul. 2006
DC CHARACTERISTICS II
8Mx16
Operating
Current
Operating
Current
Precharge
Power Down
Standby
Current
Idle Standby
Current
Idle Standby
Current
Idle Quiet
Standby
Current
Active Power
Down
Standby
Current
Active
Standby
Current
Parameter
(2M x4Bank x16I/O)
Symbol
I
I
I
I
I
I
I
I
DD2N
DD2Q
DD3N
DD2P
DD2F
DD3P
DD0
DD1
One bank; Active - Precharge ; t
t
per clock cycle; address and control inputs changing
once per clock cycle
One bank; Active - Read - Precharge;
Burst Length=2; t
and control inputs changing once per clock cycle
All banks idle; Power down mode; CKE=Low,
t
VIN>=VIH(min) or VIN=<VIL(max) for DQ, DQS and
DM
/CS=High, All banks idle; t
CKE=High; address and control inputs changing once
per clock cycle.
V
/CS>=V
Addresses and other control inputs stable, V
DQ, DQS and DM
One bank active; Power down mode; CKE=Low,
t
/CS=HIGH; CKE=HIGH; One bank; Active-Precharge;
t
DQ, DM and DQS inputs changing twice per clock cycle;
Address and other control inputs changing once per
clock cycle
CK
CK
CK
RC
IN
=t
=t
=t
=t
=V
CK
CK
CK
RAS
REF
(min) ; DQ,DM and DQS inputs changing twice
(min)
(min)
IH
(max); t
(min); All banks idle; CKE>=V
for DQ, DQS and DM
(TA=0 to 70
CK
RC
Test Condition
=t
=t
CK
RC
o
(min);
(min); t
C, Voltage referenced to V
CK
=t
CK
RC
CK
(min);
=t
=t
RC
CK
(min);
(min); address
IH
(min);
IN
=Vref for
SS
= 0V)
HY5DU281622FT(P) Series
133
110
110
50
60
J
Speed
133
100
100
20
20
K
-
-
45
50
100
100
100
H
Unit
MHz
mA
mA
mA
mA
mA
mA
mA
mA
Note
20