HY27UF081G2M Hynix Semiconductor, HY27UF081G2M Datasheet - Page 17

• Manufacturer Part Number: HY27UF081G2M
• Description: (HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory
• Manufacturer: Hynix Semiconductor

4.4 Multiple Die (2Gbit / 4Gbit) Concurrent Operations and Extended Read Status
When the 1Gbit is stacked to form a 2Gbit DDP or a 4Gbit QDP some concurrent operations (like Erase while Read,
Read while write, etc.) are available. Moreover an extended Read Status Register Feature is included to check the sta-
tus of each stacked device. In more details it is possible to run a first operation selecting the first 1Gbit, then activate
a concurrent operation on the second (or third or fourth) device, checking the progression of these operations by the
use of the extended Read Status Register feature.
The command sequence to be used is shown in table 7. The result is the typical Read Status Pattern.
Rev 0.6 / Mar. 2005
Read Status 1st device
Read Status 2nd device
Read Status 3rd device
Read Status 4th device
Valid Block Number
Parameter
Table 7: Extended Read Status Register Commands
Symbol
(AX<= 0x07FFFFFF)
(0x07FFFFFF <AX<= 0x0FFFFFFF)
(0x17FFFFFF <AX<= 0x1FFFFFFF)
(0x0FFFFFFF <AX<= 0x17FFFFFF)
N
VB
FUNCTION
Table 8: Valid Blocks Number
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
1004
Min
Typ
HY27UF(08/16)1G2M Series
HY27SF(08/16)1G2M Series
1024
Max
COMMAND
Preliminary
72h
73h
74h
75h
Blocks
Unit
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