HY27UF081G2M Hynix Semiconductor, HY27UF081G2M Datasheet - Page 24

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HY27UF081G2M

Manufacturer Part Number
HY27UF081G2M
Description
(HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory
Manufacturer
Hynix Semiconductor
Datasheet

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Rev 0.6 / Mar. 2005
(Without Spare Area)
(Without Spare Area)
Serial Access Time
(Byte / 512Byte)
Spare Area Size
Organization
Block Size
Page Size
Not Used
Table 17: 4th Byte of Device Identifier Description
1K
2K
Reserved
Reserved
8
16
Standard (50ns)
Fast
64K
128K
256K
Reserved
X8
X16
Description
(30ns)
Figure 7: Command Latch Cycle
Reserved
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
IO7
IO6
0
1
IO5-4
0 0
0 1
1 0
1 1
HY27UF(08/16)1G2M Series
HY27SF(08/16)1G2M Series
IO3
0
1
IO2
0
1
Preliminary
IO1-0
0 0
0 1
1 0
1 1
24

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