MT24D836 Micron Technology, Inc, MT24D836 Datasheet - Page 7

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MT24D836

Manufacturer Part Number
MT24D836
Description
DRAM Module
Manufacturer
Micron Technology, Inc
Datasheet
OBSOLETE
AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 10, 11, 12) (V
4, 8 Meg x 36 Parity DRAM SIMMs
DM45.pm5 – Rev. 3/97
AC CHARACTERISTICS
PARAMETER
Read command hold time (referenced to RAS#)
RAS# hold time
Write command to RAS# lead time
Transition time (rise or fall)
Write command hold time
Write command hold time (referenced to RAS#)
WE# command setup time
Write command pulse width
WE# hold time (CBR REFRESH)
WE# setup time (CBR REFRESH)
CC
= +5V 10%)
7
SYMBOL
t
t
t
t
t
t
t
t
WCH
WCR
WRH
WCS
WRP
RRH
RSH
RWL
t
Micron Technology, Inc., reserves the right to change products or specifications without notice.
WP
t
T
MIN
15
10
10
15
10
45
10
0
2
0
PARITY DRAM SIMMs
-6
MAX
50
4, 8 MEG x 36
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
„1997, Micron Technology, Inc.
NOTES
16

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