74ABT648PW,112 NXP Semiconductors, 74ABT648PW,112 Datasheet
74ABT648PW,112
Specifications of 74ABT648PW,112
935178870112
Related parts for 74ABT648PW,112
74ABT648PW,112 Summary of contents
Page 1
Octal transceiver/register; inverting; 3-state Rev. 04 — 27 April 2005 1. General description The 74ABT648 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive. The 74ABT648 transceiver/register consists of bus transceiver ...
Page 2
Philips Semiconductors 3. Quick reference data Table 1: GND = Symbol Parameter t PLH t PHL I Ordering information Table 2: Ordering information Type number Package Temperature range 74ABT648D 40 C ...
Page 3
Philips Semiconductors Fig 3. Logic diagram 9397 750 14858 Product data sheet DIR 23 CPBA 22 SBA 1 CPAB 2 SAB CHANNELS ...
Page 4
Philips Semiconductors 6. Pinning information 6.1 Pinning Fig 4. Pin configuration 6.2 Pin description Table 3: Symbol CPAB SAB DIR GND 9397 750 ...
Page 5
Philips Semiconductors Table 3: Symbol SBA CPBA Functional description 7.1 Function table [1] Table 4: Function table Operating mode Input OE Store Store A, B unspecified X Store B, A unspecified X Store A ...
Page 6
Philips Semiconductors 7.2 Bus management function Real time bus transfer bus B to bus Storage from bus A, bus B or from bus Fig 5. Examples of bus management functions 9397 ...
Page 7
Philips Semiconductors 8. Limiting values Table 5: In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0V). Symbol ...
Page 8
Philips Semiconductors 10. Static characteristics Table 7: Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter amb V input diode voltage IK V HIGH-level output voltage OH V ...
Page 9
Philips Semiconductors Table 7: Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter +85 C amb V input diode voltage IK V HIGH-level output voltage OH V ...
Page 10
Philips Semiconductors 11. Dynamic characteristics Table 8: Dynamic characteristics GND = 0 V; for test circuit see Figure 12 Symbol Parameter 5.0 V amb CC t propagation delay PLH CPAB CPBA ...
Page 11
Philips Semiconductors Table 8: Dynamic characteristics GND = 0 V; for test circuit see Figure 12 Symbol Parameter + amb CC t propagation delay PLH CPAB CPBA ...
Page 12
Philips Semiconductors 12. Waveforms Fig 6. Propagation delay clock input to output, clock pulse width and maximum clock Fig 7. Propagation delay and SAB SBA to An Fig 8. Propagation ...
Page 13
Philips Semiconductors Fig 9. Data set-up and hold times Fig 10. 3-state output enable time to HIGH level and disable time from HIGH level Fig 11. 3-state output enable time to LOW level and disable time from LOW level 9397 ...
Page 14
Philips Semiconductors Fig 12. Load circuitry for switching times Table 9: Input V I 3.0 V 9397 750 14858 Product data sheet V I PULSE GENERATOR Test data is given in Table 9. Definitions test circuit Load resistor. ...
Page 15
Philips Semiconductors 13. Package outline SO24: plastic small outline package; 24 leads; body width 7 pin 1 index 1 e DIMENSIONS (inch dimensions are derived from the original mm dimensions) A UNIT ...
Page 16
Philips Semiconductors TSSOP24: plastic thin shrink small outline package; 24 leads; body width 4 pin 1 index 1 DIMENSIONS (mm are the original dimensions) A UNIT max. 0.15 0.95 mm ...
Page 17
Philips Semiconductors 14. Revision history Table 10: Revision history Document ID Release date 74ABT648_4 20050427 • Modifications: The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. • Section ...
Page 18
Philips Semiconductors 15. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. ...
Page 19
Philips Semiconductors 20. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . ...