MT55L256V36F Micron Technology, MT55L256V36F Datasheet - Page 3

• Manufacturer Part Number: MT55L256V36F
• Description: (MT55LxxxLxxF) 8Mb SRAM
• Manufacturer: Micron Technology

GENERAL DESCRIPTION (continued)
(ADV/LD#), synchronous clock enable (CKE#), byte
write enables (BWa#, BWb#, BWc#, and BWd#), and
read/write (R/W#).
(OE#, which may be tied LOW for control signal mini-
mization), clock (CLK), and snooze enable (ZZ, which
may be tied LOW if unused). There is also a burst mode
pin (MODE) that selects between interleaved and linear
burst modes. MODE may be tied HIGH, LOW, or left
unconnected if burst is unused. The flow-through data-
out (Q) is enabled by OE#. WRITE cycles can be from
one to four bytes wide as controlled by the write control
inputs.
ated by the ADV/LD# input. Subsequent burst ad-
dresses can be internally generated as controlled by the
burst advance pin (ADV/LD#). Use of burst mode is
optional. It is allowable to give an address for each
individual READ and WRITE cycle. BURST cycles wrap
around after the fourth access from a base address.
bus, the flow-through ZBT SRAM uses a LATE WRITE
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_C.p65 – Rev. 2/02
Asynchronous inputs include the output enable
All READ, WRITE, and DESELECT cycles are initi-
To allow for continuous, 100 percent use of the data
3
cycle. For example, if a WRITE cycle begins in clock cycle
one, the address is present on rising edge one. BYTE
WRITEs need to be asserted on the same cycle as the
address. The write data associated with the address is
required one cycle later, or on the rising edge of clock
cycle two.
simplify WRITE cycles. This allows self-timed WRITE
cycles. Individual byte enables allow individual bytes to
be written. During a BYTE WRITE cycle, BWa# controls
DQa pins; BWb# controls DQb pins; BWc# controls
DQc pins; and BWd# controls DQd pins. Cycle types
can only be defined when an address is loaded, i.e.,
when ADV/LD# is LOW. Parity/ECC bits are available
only on the x18 and x36 versions.
power supply, and all inputs and outputs are LVTTL-
compatible. Users can choose either a 3.3V or 2.5V I/O
version. The device is ideally suited for systems requir-
ing high bandwidth and zero bus turnaround delays.
(www.micron.com/sramds) for the latest data sheet.
Address and write control are registered on-chip to
Micron’s 8Mb ZBT SRAMs operate from a +3.3V V
Please
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
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