MT8VDDT6464HD Micron Semiconductor Products, MT8VDDT6464HD Datasheet - Page 12

• Manufacturer Part Number: MT8VDDT6464HD
• Description: (MT8VDDTxx64HD) 200-Pin DDR Sdram Sodimms
• Manufacturer: Micron Semiconductor Products

w w w . D a t a S h e e t 4 U . c o m
Absolute Maximum Ratings
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
Table 10: DC Electrical Characteristics and Operating Conditions
Notes: 1–5, 14, 50; notes appear on pages 20–23; 0°C £ T
Table 11: AC Input Operating Conditions
Notes: 1–5, 14, 50; notes appear on pages 20–23; 0°C £ T
09005aef806e1d28
DD8C16_32_64x64HDG_B.fm - Rev. B 7/03 EN
PARAMETER/CONDITION
Supply Voltage
I/O Supply Voltage
I/O Reference Voltage
I/O Termination Voltage (system)
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
INPUT LEAKAGE CURRENT
Any input 0V £ V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT
(DQ pins are disabled; 0V £ V
OUTPUT LEVELS
High Current (V
Low Current (V
OUTPUT LEVELS: Reduced drive option
High Current (V
Low Current (V
PARAMETER/CONDITION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
I/O Reference Voltage
Stresses greater than those listed may cause perma-
Voltage on V
Voltage on V
Voltage on V
Voltage on I/O Pins
Relative to V
Relative to V
Relative to V
Relative to V
OUT
OUT
OUT
DD
DD
REF
OUT
IN
£ V
SS
SS
SS
SS
Q Supply
Supply
= V
and Inputs
= 0.373V, maximum V
= 0.763V, maximum V
= V
. . . . . . . . . . . . . . . . . . . . . -1V to +3.6V
. . . . . . . . . . . . . . . . . . . . -1V to +3.6V
. . . . . . . . . . . . . . . . . . . . -1V to +3.6V
. . . . . . . . . . . . . -0.5V to V
DD
DD
DD
, Vref pin 0V £ V
Q -0.763V, minimum V
Q-0.373V, minimum V
OUT
£ V
DD
IN
Q)
£ 1.35V
REF
REF
, maximum V
,maximum V
REF
REF
DD
SYMBOL
Command/
Address, RAS#,
CAS#, WE#
CK, CK#, CKE
DM
DQ, DQS
, minimum V
, minimum V
V
Q +0.5V
V
V
REF
IH
IL
(
(
AC
AC
(
AC
A
A
)
)
TT
TT
)
£ +70°C
£ +70°C; V
)
)
12
TT
TT
)
)
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
V
0.49 ´ V
SYMBOL
Operating Temperature,
Storage Temperature (plastic) . . . . . . -55°C to +150°C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . 8W
Short Circuit Output Current. . . . . . . . . . . . . . . 50mA
REF
V
DD
V
V
V
I
V
IH
I
IL
V
I
I
OHR
DD
I
OLR
OH
MIN
OZ
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T
REF
OL
DD
I
I
I
(
TT
(
= V
128MB, 256MB, 512MB (x64)
I
I
I
+ 0.310
DC
DC
A
–
Q
(ambient) . . . . . . . . . . . . . . . . . . . .. 0°C to +70°C
)
)
DD
DD
Q = +2.5V ±0.2V
Q
V
V
REF
REF
0.49 ´
V
-16.8
MIN
16.8
-0.3
2.3
2.3
-16
-10
DD
-8
-4
-9
0.51 ´ V
+ 0.15
9
200-PIN DDR SODIMM
- 0.04 V
V
REF
Q
MAX
- 0.310
–
V
DD
V
REF
REF
DD
0.51 ´
MAX
V
Q
2.7
2.7
DD
16
10
+ 0.04
8
4
–
–
- 0.15
–
–
©2003 Micron Technology, Inc. All rights reserved.
+ 0.3
Q
UNITS
V
V
V
UNITS
mA
mA
mA
mA
µA
µA
µA
µA
V
V
V
V
V
V
12, 25, 36
12, 25, 36
NOTES
32, 37, 40
NOTES
6
32, 37
33, 35
34, 35
6, 40
7, 40
25
25
49
49
49
49