STB16NB25 ST Microelectronics, STB16NB25 Datasheet - Page 2

• Manufacturer Part Number: STB16NB25
• Description: N-CHANNEL MOSFET
• Manufacturer: ST Microelectronics

STB16NB25
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
OFF
ON ( )
DYNAMIC
2/8
V
Symbo l
Symbo l
Symbo l
Symbo l
R
R
R
Rthj -amb
V
g
(BR)DSS
I
thj -case
thc-sink
C
I
I
E
DS(on)
C
C
GS(th)
D(o n)
f s
I
GSS
DSS
T
AR
os s
AS
rss
iss
( )
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature F or Soldering Purpose
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage V
Static Drain-source On
Resistance
On State Drain Current V
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Parameter
Parameter
Parameter
j
DS
= 25
= 0)
o
GS
C, I
= 0)
D
= I
j
I
V
V
V
V
V
V
V
AR
Parameter
max)
D
DS
DS
GS
DS
GS
DS
GS
DS
DS
= 250 A
, V
= V
= 25 V
= 10 V
= Max Rating
= Max Rating
=
= 10V I
> I
> I
case
DD
D(o n)
D(o n)
GS
= 50 V)
30 V
= 25
Test Con ditions
Test Con ditions
Test Con ditions
x R
x R
I
D
D
f = 1 MHz
V
o
= 250 A
= 8 A
DS(on )ma x
DS(on )ma x
C unless otherwise specified)
GS
= 0
Max
Max
Typ
T
V
c
I
GS
D
= 125
=8 A
= 0
o
C
Min.
Min.
Min.
250
16
3
62.5
300
Max Value
0.9
0.5
1000
Typ.
Typ.
Typ.
0.22
250
250
16
40
4
4
Max.
Max.
Max.
0.28
10
100
1
5
oC/W
o
o
Unit
Unit
Unit
Unit
C/W
C/W
mJ
nA
pF
pF
pF
o
V
V
A
S
A
A
A
C