2SD1472 Hitachi Semiconductor, 2SD1472 Datasheet
2SD1472
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2SD1472 Summary of contents
Page 1
... Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Outline UPAK 2SD1472 Base 2. Collector 3. Emitter 4. Collector (Flange 0.5 k (Typ) (Typ) 3 ...
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... Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature diode forward current Notes: 1. Pluse 10 ms, Duty cycle 2. Value on the alumina ceramic board (12 0.7 mm) Electrical Characteristics (Ta = 25° ...
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... Collector to Emitter Voltage (peak) 3 1.0 0 Shot Pulse 0.1 0.03 0.01 3 150 Collector to Emitter Voltage V DC Current Transfer Ratio vs. 30,000 10,000 3,000 1,000 300 5 0.1 (V) 2SD1472 Area of Safe Operation 100 300 (V) CE Collector Current Pulse 0.3 1 Collector Current I ( ...
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... Saturation Voltage vs. Collector Current 10 200, 500 (sat) 500 1 (sat 0.1 0.1 0.3 1.0 3 Collector Current I (A) C Transient Thermal Resistance the Alumina Ceramic Board (12.5 30 0.7 mm) 100 m 1 Time t (s) = 200 100 ...
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Max 1 0.53 Max 0.48 Max 1.5 1.5 3.0 1.5 0.1 0.44 Max 0.44 Max Hitachi Code JEDEC EIAJ Weight (reference value) Unit: mm (1.5) UPAK — Conforms 0.050 g ...
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... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...