2N7000KL Vishay Siliconix, 2N7000KL Datasheet

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2N7000KL

Manufacturer Part Number
2N7000KL
Description
N-Channel 60-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet
Notes
a.
Document Number: 72705
S-40247—Rev. A, 16-Feb-04
Ordering Information: 2N7000KL-TR1
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Power Dissipation
Power Dissipation
Maximum Junction-to-Ambient
Operating Junction and Storage Temperature Range
V
Pulse width limited by maximum junction temperature.
DS
G
60
60
S
D
(V)
TO-226AA
Top View
(TO-92)
1
2
3
4 @ V
2 @ V
r
a
DS(on)
GS
GS
J
J
= 4.5 V
= 10 V
= 150_C)
= 150_C)
(W)
“S” = Siliconix Logo
xxyy = Date Code
Device Marking
Front View
Parameter
7000KL
“S” 2N
xxyy
N-Channel 60-V (D-S) MOSFET
V
GS(th)
1 0 to 2 5
1.0 to 2.5
(V)
Ordering Information: BS170KL-TR1
G
A
D
S
(TO-18 Lead Form)
= 25_C UNLESS OTHERWISE NOTED)
TO-92-18RM
I
D
New Product
Top View
0.47
0.33
(A)
1
2
3
T
T
T
T
A
A
A
A
= 70_C
= 25_C
= 25_C
= 70_C
FEATURES
D TrenchFETr Power MOSFET
D ESD Protected: 2000 V
APPLICATIONS
D Direct Logic-Level Interface: TTL/CMOS
D Soild State Relays
D Drivers: Relays, Solenoids, Lamps, Hammers,
D Battery Operated Systems
“S” = Siliconix Logo
xxyy = Date Code
Device Marking
Displays, Memories, Transistors, etc.
Front View
170KL
Symbol
“S” BS
xxyy
T
R
J
V
V
I
P
P
, T
DM
thJA
I
I
DS
GS
D
D
D
D
stg
2N7000KL/BS170KL
G
−55 to 150
Limit
Vishay Siliconix
"20
0.47
0.37
0.51
156
1.0
0.8
60
100 W
www.DataSheet4U.com
www.vishay.com
D
S
Unit
_C/W
_C
W
W
V
V
A
1

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2N7000KL Summary of contents

Page 1

... Device Marking S Front View “S” 7000KL xxyy “S” = Siliconix Logo D 3 xxyy = Date Code Top View Ordering Information: 2N7000KL-TR1 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current ...

Page 2

... Vishay Siliconix a SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) A Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current State Drain Current On-State Drain Current b b Drain Source On Resistance Drain-Source On-Resistance b Forward Transconductance ...

Page 3

... −55_C J 1 0.00 0.3 0.6 0.9 V − Source-to-Drain Voltage (V) SD Document Number: 72705 S-40247—Rev. A, 16-Feb-04 New Product 0.8 1.0 0.5 0.6 = 25_C 1.2 1.5 2N7000KL/BS170KL Vishay Siliconix www.DataSheet4U.com Capacitance iss 16 C oss 8 C rss − Drain-to-Source Voltage (V) DS On-Resistance vs ...

Page 4

... Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Variance Over Temperature 0.4 0 250 mA D −0.0 −0.2 −0.4 −0.6 −0.8 −50 − 100 T − Junction Temperature (_C 0.1 0.01 0.001 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 − ...

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