2N7000KL Vishay Siliconix, 2N7000KL Datasheet - Page 2

• Manufacturer Part Number: 2N7000KL
• Description: N-Channel 60-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

2N7000KL/BS170KL
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On State Drain Current
On-State Drain Current
Drain Source On Resistance
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn On Time
Turn-On Time
Turn-Off Time
Turn-Off Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test: PW v300 ms duty cycle v2%.
Guaranteed by design, not subject to production testing.
1.0
0.8
0.6
0.4
0.2
0.0
0
b
Parameter
V
GS
V
1
DS
b
b
= 10, 7 V
Output Characteristics
− Drain-to-Source Voltage (V)
b
b
b
a
2
(T
A
= 25_C UNLESS OTHERWISE NOTED)
3
Symbol
V
V
r
r
(BR)DSS
I
I
DS(
DS(on)
t
t
I
I
I
D(
D(on)
V
GS(th)
Q
Q
d(on)
d(off)
GSS
DSS
DSS
g
Q
R
SD
t
t
gs
gd
fs
r
f
g
g
4
)
)
5 V
4 V
3 V
6 V
5
New Product
V
DS
V
= 60 V, V
V
I
I
V
V
V
V
D
D
V
V
V
V
Test Conditions
DS
GS
V
GS
DS
I
DD
DS
S
DS
GS
^ 0 2 A V
^ 0.2 A, V
GS
DS
GS
= 0.3 A, V
= 0 V, V
= 10 V, V
= 4.5 V, V
= 10 V, V
= V
= 30 V, R
= 60 V, V
= 4.5 V, I
= 10 V, I
= 10 V, I
= 0 V, I
I
I
D
D
R
GS
^ 0.25 A
^ 0.25 A
g
g
GS
= 10 W
, I
GS
= 0 V, T
D
D
GEN
GEN
GS
D
GS
DS
D
L
DS
D
GS
= 250 mA
= 10 mA
= "10 V
= 0.5 A
= 150 W
= 0.5 A
= 0.2 A
= 4.5 V
= 0 V
= 7.5 V
= 10 V
= 10V
= 10V
= 0 V
J
= 55_C
1.2
0.9
0.6
0.3
0
0
1
V
GS
Transfer Characteristics
Min
0.8
0.5
60
1
− Gate-to-Source Voltage (V)
2
Limits
T
Typ
0.87
0.11
0.15
12.8
550
173
2.0
1.1
1.6
0.4
3.8
4.8
9.6
J
www.DataSheet4U.com
3
= −55_C
S-40247—Rev. A, 16-Feb-04
Document Number: 72705
4
Max
"1
2.5
1.3
0.6
10
10
15
20
15
1
2
4
125_C
5
25_C
Unit
mS
nC
mA
mA
mA
ns
ns
W
W
W
V
V
A
A
V
6