2N3993 ETC, 2N3993 Datasheet

2N3993

Manufacturer Part Number

2N3993

Description

P-Channel Silicon Junction Field-Effect Transistor

Manufacturer

ETC

Datasheet

1.2N3993.pdf (1 pages)

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Download datasheet (94Kb)

01/99

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TOÐ72 Package

Dimensions in Inches (mm)

www.interfet.com

At 25°C free air temperature:

Static Electrical Characteristics

Gate Source Breakdown Voltage

Gate Source Cutoff Voltage

Drain Saturation Current (Pulsed)

Drain Reverse Current

Drain Cutoff Current

Dynamic Electrical Characteristics

Drain Source ON Resistance

Common Source

Forward Transmittance

Common Source Input Capacitance

Common Source

Reverse Transfer Capacitance

Pin Configuration

1 Source, 2 Gate, 3 Drain, 4 Case

| Y

DSS

DGO

D(OFF)

ds(on)

(BR)GSS

GS(OFF)

iss

rss

P-Channel Silicon Junction Field-Effect Transistor

– 10

Min

2N3993

Absolute maximum ratings at T

Reverse Gate Source & Reverse Gate Drain Voltage

Continuous Forward Gate Current

Continuous Device Power Dissipation

Power Derating

– 1.2

Max

150

9.5

– 1

4.5

– 10

Min

2N3993A

– 1.2

Max Unit

150

9.5

– 1

µA

Ω

1000 N. Shiloh Road, Garland, TX 75042

(972) 487-1287

= 1 µA, V

= – 10V, I

= – 10V, V

= ØV, I

= – 10V, V

= Ø, V

= – 15V, I

= 25¡C

Process PJ99

= Ø A

= 10V

= ØV

2N3993, 2N3993A

= – 1 µA

= ØA

Test Conditions

= ØV

= 10 V

= ØV

FAX

(972) 276-3375

2.4 mW/°C

– 10 mA

300 mW

25 V

f = 1 kHz

f = 1 MHz

= 150°C

B-7

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