2SC4571 NEC, 2SC4571 Datasheet

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2SC4571

Manufacturer Part Number
2SC4571
Description
NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
Manufacturer
NEC
Datasheet

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Document No. P10409EJ2V0DS00 (2nd edition)
Date Published March 1997 N
Printed in Japan
(Previous No. TC-2435)
DESCRIPTION
OSC/MIX.
transistor has been applied super mini mold package.
FEATURES
• High f
• Low C
• Super Mini Mold Package. (EIAJ : SC-70)
ORDERING INFORMATION
* Please contact with responsible NEC person, if you require evaluation
ABSOLUTE MAXIMUM RATINGS (T
2SC4571-T1
2SC4571-T2
sample. Unit sample lot. quantity shall be 50 pcs. (Part No.: 2SC4571)
The 2SC4571 is a low supply voltage transistor designed for UHF
It is suitable for a high density surface mount assembly since the
NUMBER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
PART
T
ob
: 5.0 GHz TYP. (@ V
: 0.9 pF TYP. (@ V
3 kpcs./Reel
3 kpcs./Reel
QUANTITY
NPN SILICON EPITAXIAL TRANSISTOR
Embossed tape 8 mm wide. Pin 3 (Collector) face
to perforation side of the tape.
Embossed tape 8 mm wide. Pin 1 (Emitter), Pin 2
(Base) face to perforation side of the tape.
CB
CE
= 5 V, I
= 5 V, I
V
V
V
I
P
T
T
C
j
stg
CBO
CEO
EBO
T
E
SUPER MINI MOLD
C
= 0, f = 1 MHz)
DATA SHEET
= 5 mA, f = 1 GHz)
A
PACKING STYLE
= 25

55 to +125
 
120
125
20
12
60
C)
3
mW
mA


V
V
V
C
C
SILICON TRANSISTOR
PACKAGE DIMENSIONS
2SC4571
PIN CONNECTIONS
1.
2.
3.
(Units: mm)
2
1
Emitter
Base
Collector
1.25±0.1
2.1±0.1
©
Marking
3
1993

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2SC4571 Summary of contents

Page 1

... Embossed tape 8 mm wide. Pin 1 (Emitter), Pin 2 (Base) face to perforation side of the tape. * Please contact with responsible NEC person, if you require evaluation sample. Unit sample lot. quantity shall be 50 pcs. (Part No.: 2SC4571) ABSOLUTE MAXIMUM RATINGS (T Collector to Base Voltage Collector to Emitter Voltage ...

Page 2

... UNIT  0 0 100 200 5.0 GHz 0 T77 T77 100 to 200 2SC4571 TEST CONDITIONS 10 MHz mA GHz CE ...

Page 3

... 0.5 1 INSERTION POWER GAIN vs. COLLECTOR CURRENT 0 100 2SC4571 0.4 0.6 0.8 1.0 -Base to Emitter Voltage -Collector Current- GHz -Collector Current-mA ...

Page 4

... INSERTION POWER GAIN vs. FREQUEUCY 0.1 0.2 0.5 1.0 2.0 f-Frequency-GHz 4 OUTPUT CAPACITANCE vs. COLLECTOR TO BASE VALTAGE 2 1.0 0.7 0.5 0.2 0.1 5 -Collector to Base Voltage-V CB 2SC4571 MHz ...

Page 5

... S 22 MAG ANG  71.8 .910 18.4  61.2 .763 30.3  55.5 .643 36.7  52.9 .560 40.1  52.1 .502 42.3  51.8 .462 43.8  51.9 .434 45.2  52.0 .414 46.6  52.4 .398 47 ...

Page 6

... S 22 MAG ANG  79.9 .988 7.4  69.5 .954 14.2  61.1 .911 20.1  53.7 .867 25.2  47.9 .820 29.5  42.2 .786 33.4  38.6 .752 36.6  35.1 .726 39.6  32.9 .702 42 ...

Page 7

... S 22 MAG ANG  74.4 .941 15.6  61.3 .829 27.6  54.0 .720 35.4  48.7 .634 40.9  46.0 .567 44.5  44.2 .520 47.3  43.4 .483 49.6  43.0 .457 51.6  42.7 .435 53 ...

Page 8

... The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. 2SC4571 M4 96. 5 ...

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