2SC5010 NEC, 2SC5010 Datasheet - Page 3

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2SC5010

Manufacturer Part Number
2SC5010
Description
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
Manufacturer
NEC
Datasheet

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TYPICAL CHARACTERISTICS (T
150
100
50
30
20
10
14
12
10
0
0
8
6
4
2
0
0.5
V
f = 2 GHz
CE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
V
= 3 V
1
CE
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
– Collector to Emitter Voltage – V
A
2
I
C
– Ambient Temperature – ˚C
– Collector Current – mA
2
50
4
5
10
100
6
20
Free Air
A
180
160
140
120
100
I
B
80
60
40
20
= 25 ˚C)
= 200 A
A
A
A
A
A
A
A
A
A
50
150
8
500
200
100
12
50
20
10
50
40
30
20
10
8
4
0
0
0.5
1
V
CE
V
CE
= 3 V
1
2
= 3 V
V
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
BE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
I
2
– Base to Emitter Voltage – V
C
I
C
– Collector Current – mA
5
– Collector Current – mA
10
5
0.5
10
20
2SC5010
V
f = 2 GHz
CE
20
50
= 3 V
100
50
1.0
3

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