2SC5810 Toshiba Semiconductor, 2SC5810 Datasheet - Page 4

• Manufacturer Part Number: 2SC5810
• Description: TOSHIBA Transistor Silicon NPN Epitaxial Type
• Manufacturer: Toshiba Semiconductor

0.03
0.01
0.3
0.1
10
3
1
0.1
I C max (continuous)
*: Single nonrepetitive pulse
Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm
curves must be derated linearly
with increase in temperature.
I C max (pulsed)*
DC operation
(Ta = 25°C)
Ta = 25°C
0.3
2
Collector-emitter voltage V
). These characteristic
1000
300
100
Safe Operating Area
30
10
0.001
3
1
100 ms*
1
10 s*
10 ms*
0.003
3
1 ms*
0.01
10
100 µs*
CE
0.03
(V)
30
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm
10 µs*
0.1
100
0.3
Pulse width t
r
th
1
4
– t
w
w
3
(s)
10
30
100
300
2
)
1000
2004-07-07
2SC5810