2SC6026MFV Toshiba Semiconductor, 2SC6026MFV Datasheet
2SC6026MFV
Manufacturer Part Number
2SC6026MFV
Description
Transistor Silicon NPN Epitaxial Type
Manufacturer
Toshiba Semiconductor
Datasheet
1.2SC6026MFV.pdf
(4 pages)
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General-Purpose Amplifier Applications
•
•
•
•
•
Maximum Ratings
* : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mm)
Mount Pad Dimensions (Reference)
High voltage and high current
Excellent h
High h
Complementary to 2SA2154MFV
Lead (Pb) - free
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
1.15
FE
h
FE
Characteristic
FE
(I
C
0.4
linearity :
= 0.1 mA)/h
0.5
0.4
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
0.4
0.45
: V
(Ta = 25°C)
:
h
0.45
CEO
FE
FE
= 120~400
(I
= 50 V, I
Unit: mm
C
= 2 mA) = 0.95 (typ.)
2SC6026MFV
Symbol
V
V
V
T
CBO
CEO
P
EBO
I
I
T
stg
C
B
C
C
j
= 150 mA (max)
−55~150
Rating
150*
150
150
60
50
30
5
1
Unit
mW
mA
mA
°C
°C
V
V
V
JEDEC
JEITA
TOSHIBA
VESM
Weight: 0.0015 g (typ.)
1.BASE
2.EMITTER
3.COLLECTOR
1
1
2
2SC6026MFV
0.80 ± 0.05
1.2 ± 0.05
2-1L1A
2005-06-28
―
―
3
Unit: mm
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2SC6026MFV Summary of contents
Page 1
... V 60 CBO V 50 CEO V 5 EBO I 150 150 150 j −55~150 T stg 0.45 0.4 0.45 Unit 2SC6026MFV 1.2 ± 0.05 0.80 ± 0. Unit V V 1.BASE 2.EMITTER V VESM 3.COLLECTOR mA mA JEDEC ― mW JEITA ― °C TOSHIBA 2-1L1A °C Weight: 0.0015 g (typ.) 2005-06-28 Unit ...
Page 2
... (sat MHz Type Name h Classification FE 2 2SC6026MFV Min Typ. Max Unit ⎯ ⎯ µA 0.1 ⎯ ⎯ µA 0.1 ⎯ ⎯ 120 400 ⎯ 0.1 0.25 V ⎯ ⎯ 60 MHz ⎯ ...
Page 3
... COMMON EMITTER IC/ 100° 100 1000 IB - VBE -25 COMMON EMITTER VCE = 6V 0.4 0.6 0.8 1 1.2 1.4 3 2SC6026MFV hFE - IC 1000 Ta = 100°C 25 -25 100 COMMON EMITTER VCE = 6 V VCE = 0 100 COLLECTOR CURRENT IC (mA) VBE(sat COMMON EMITTER IC ...
Page 4
... www.DataSheet4U.com 2SC6026MFV 4 2005-06-28 ...