GT40T301 Toshiba Semiconductor, GT40T301 Datasheet
GT40T301
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GT40T301 Summary of contents
Page 1
... GT40T301 = 3.7 V (typ Symbol Rating Unit V 1500 V CES GES ECF ECPF P 200 150 ° 55~150 °C stg Collector Emitter 1 GT40T301 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-21F2C Weight: 9.75 g (typ.) 2002-01-18 ...
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... ies off ECF ECF di/dt rr ECF GE IGBT R th (j-c) Diode 2 GT40T301 Min Typ. Max 500 0 1.0 4.0 7.0 3.7 5.0 1 MHz 2900 0.40 0.45 0.23 0.40 0.6 600 V 1.9 2 0.7 3.0 0.625 1.25 2002-01-18 Unit ...
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... Gate-emitter voltage Common emitter Tc 125° Gate-emitter voltage V 10 Common emitter Case temperature Tc (°C) 3 GT40T301 V – ( – ...
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... Collector-emitter voltage V 200 100 125° 1000 3000 Collector-emitter voltage V 4 GT40T301 Switching time – off 100 300 500 1000 Gate resistance – ies ...
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... Emitter-collector forward voltage V 1.0 100 Common collector di/ 0 25°C 0.6 60 0 100 0 (A) ECF 5 GT40T301 I – V ECF ECF Common collector Tc 40°C 25 125 (V) ECF – di/ Common collector I ECF 25° ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice. 6 GT40T301 000707EAA 2002-01-18 ...