TLP227G Toshiba Semiconductor, TLP227G Datasheet
TLP227G
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TLP227G Summary of contents
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... The TOSHIBA TLP227G series consist of a gallium arsenide infrared emitting diode optically coupled to a photo−MOS FET in a plastic DIP package. The TLP227G series are a bi−directional switch which can replace mechanical relays in many applications. · TLP227G: 4 pin DIP(DIP4),1 channel type(1 form A) TLP227G− ...
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... Off-state output terminal voltage TLP227G On-state current TLP227G-2 TLP227G On-state current derating(Ta ≥ 25°C) TLP227G-2 Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10 s) Isolation voltage (AC,1 min., R.H.≤ 60%) (Note 1): Two channels operating simultaneously. (Note 2): Device considered a two-terminal device: LED side pins shorted together.and detector side pins shorted together ...
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... Symbol Test Condition t R =200Ω =20V,I =5mA OFF OUT 3 V OUT t 3 TLP227G,TLP227G−2 Min. Typ. Max. 1.0 1.15 ― ― ― 30 ― — ― 40 Min. Typ. Max. ― 2 ― 22 ― 26 Min. Typ. Max. ― 0 5× ...
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... Ta = 25° 0.5 0.3 0.1 0 0.6 0 1000 500 300 100 0.6 1.0 Pulse forward voltage V 4 TLP227G,TLP227G−2 I – 100 20 I – 1.2 1.4 1.6 1.8 1.0 Forward voltage V ( – Pulse width ≤ 10µs Repetitive frequency = 100Hz Ta = 25°C 1.8 2.2 2 ...
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... Ambient temperature Ta (°C) 200 100 0 -100 -200 -4 80 100 1000 500 300 100 100 -20 0 Ambient temperature Ta (°C) 5 TLP227G,TLP227G−2 I – 25° 5mA -2 On-state voltage V ( – Ta OFF V OFF = 350V 100 20 2002-09-25 ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. TLP227G,TLP227G−2 6 000707EBC 2002-09-25 ...