TLP351 Toshiba Semiconductor, TLP351 Datasheet
TLP351
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TLP351 Summary of contents
Page 1
... The TOSHIBA TLP351 consists of a GaAℓAs light emitting diode and a integrated photodetector. This unit is 8-lead DIP package. TLP351 is suitable for gate driving circuit of IGBT or power MOS FET. Especially TLP351 is capable of “direct” gate drive of lower Power IGBTs. Peak output current: ±0.6 A (max) · ...
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... ¾ ¾ ±0 OPH OPL -40 ¾ T 100 opr 2 Rating Unit 20 mA -0.54 mA/° 125 °C -0 125 °C 25 kHz -55 to 125 °C -40 to 100 °C 260 °C 3750 Vrms Unit °C 2002-10-29 TLP351 ...
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... 100 mA, O ¾ ¾ 1 ¾ I 1.3 F > ¾ 2.5 < 0.8 ¾ ¾ 10 ¾ ¾ 1 ´ 2002-10-29 TLP351 Max Unit 1.70 V ¾ mV/° ¾ pF ¾ ¾ A ¾ ¾ ¾ V 1.0 2 ¾ ¾ pF ¾ W ...
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... -10000 ¾ ¾ (min ¾ ¾ 10000 = (max) OPL OPL A V6 CCL I CCL 2002-10-29 TLP351 Unit V/ ...
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... PDD · · TLP351 pHL pLH 1000 26V 800 ...
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... 100 -40 - -0.8 -0.6 -0.4 -0.2 0 -40 -20 80 100 6 TLP351 V – 100 Ambient temperature Ta (°C) I – Ta CCH 100 Ambient temperature Ta (°C) I – Ta OPH 8 8 ...
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... Ambient temperature Ta (°C) *: The above graphs show typical characteristics. 500 400 300 t PLH 200 t PHL 100 0 80 100 -40 -20 Ambient temperature Ta (°C) 7 TLP351 – Ta PHL PLH 100 2002-10-29 ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 8 TLP351 000707EBC 2002-10-29 ...