TLP701 Toshiba Semiconductor, TLP701 Datasheet

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TLP701

Manufacturer Part Number
TLP701
Description
Industrial inverters Inverter
Manufacturer
Toshiba Semiconductor
Datasheet

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Industrial inverters
Inverter for air conditioners
IGBT/Power MOS FET gate drive
photodetector.
DIP and meets the reinforced insulation class requirements of international safety
standards. Therefore the mounting area can be reduced in equipment requiring
safety standard certification.
In particular, the TLP701 is capable of “direct” gate driving of low-power IGBTs.
Truth Table
TLP701 consists of a GaAℓAs light-emitting diode and an integrated
This unit is 6-lead SDIP package. The TLP701 is 50% smaller than the 8-pin
The TLP701 is suitable for gate driving circuits for IGBTs or power MOSFETs.
Peak output current
Guaranteed performance over temperature : −40 to 100°C
Supply current
Power supply voltage
Threshold input current
Switching time (t
Common mode transient immunity
Isolation voltage
Construction mechanical rating
UL Recognized
Option (D4)
Creepage Distance
Clearance
Insulation Thickness
( Note ) When a EN60747-5-2 approved type is needed,
TÜV approved
Input
Maximum operating insulation voltage : 890 V
Highest permissible over voltage
H
L
please designate the “Option(D4)”
LED
OFF
ON
p
LH
/ t
p
HL
)
7.62-mm pitch
OFF
standard type
7.0 mm (min)
7.0 mm (min)
0.4 mm (min)
TOSHIBA Photocoupler GaAℓAs IRED + Photo IC
Tr1
ON
www.DataSheet4U.com
OFF
Tr2
ON
: ±0.6 A (max)
: 2 mA (max)
: 10 to 30 V
: I
: 700 ns (max)
: ±10 kV/µs (min)
: 5000 Vrms (min)
: UL1577, File No. E67349
: 8000 V
: EN60747-5-2
TLP701
Certificate No. R50033433
FLH
Output
10.16-mm pitch
TLPXXXF type
8.0 mm (min)
8.0 mm (min)
0.4 mm (min)
H
L
= 5 mA (max)
pk
pk
1
Pin Configuration
Schematic
1
2
3
V
1+
3−
F
Weight:0.26 g (t yp .)
TOSHIBA
A 0.1-µF bypass capacitor must be connected
between pins 6 and 4. (See Note 6.)
4.58±0.25
1 2 3
6 5 4
SHIELD
I
F
SHIELD
0.4±0.1
1.27±0.2
11-5J1
(Tr1)
(Tr2)
2006-01-17
(Top View)
6
5
4
7.62±0.25
TLP701
1.25±0.25
9.7±0.3
I
Unit in mm
O
I
CC
1: ANODE
2: NC
3: CATHODE
4: GND
5: V
6: V
5
4
6
V
GND
V
O
CC
11-5J1
O
CC
( OUTPUT )

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TLP701 Summary of contents

Page 1

... TLP701 consists of a GaAℓAs light-emitting diode and an integrated photodetector. This unit is 6-lead SDIP package. The TLP701 is 50% smaller than the 8-pin DIP and meets the reinforced insulation class requirements of international safety standards. Therefore the mounting area can be reduced in equipment requiring safety standard certification ...

Page 2

... OPH OPL ⎯ T opr −40 100 2 Rating Unit 20 mA −0.54 mA/° 125 °C −0 125 °C 25 kHz −40 to 100 °C −55 to 125 °C 260 °C 5000 Unit °C 2006-01-17 TLP701 ...

Page 3

... F ⎯ > 2.5 ⎯ < 0.8 ⎯ ⎯ 10 Min. Typ. Max. ⎯ (Note 5) 1.0 = 500 1×10 10 (Note 5) ⎯ 5000 ⎯ 10000 ⎯ 10000 2006-01-17 TLP701 Max Unit 1.70 V ⎯ mV/°C µA 10 ⎯ pF ⎯ ⎯ A ⎯ ⎯ ⎯ V 1.0 2 ⎯ Unit ⎯ ...

Page 4

... ⎯ ⎯ −10000 = (min ⎯ ⎯ 10000 = (max) OPL 1 6 0.1µF I OPL 0.1µ CCL I CCL 0.1µ 2006-01-17 TLP701 Unit ns V/µ ...

Page 5

... Ω 0.1µ • • TLP701 1000 26V 800 (µs) 800 V = − ...

Page 6

... TLP701 ⊿ ⊿ 0.3 0 (mA) I – Ta FLH VCC=15V VO> °C Ambient Temperature Ta 5mA ...

Page 7

... The above graphs show typical characteristics 100 -40 -20 0 -0.2 V 6-5 =10.0V -0.4 -0.6 V 6-5 =2.0V -0.8 -1 -40 - 100 60 80 100 7 TLP701 =5mA V CC =30V °C Ambient Temperature Ta – Ta OPH I F =5mA,V CC =15V (Note:9) V 8-6 =4.0V V 8-6 =10V Ambient Temperature Ta(°C) 2006-01-17 ...

Page 8

... TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. 8 TLP701 030619EBC 2006-01-17 ...

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