TLP705 Toshiba Semiconductor, TLP705 Datasheet - Page 4

• Manufacturer Part Number: TLP705
• Description: Industrial Inverter IGBT/Power MOS FET Gate Drive
• Manufacturer: Toshiba Semiconductor

www.DataSheet.co.kr
Switching Characteristics
Propagation delay time
Propagation delay time
Propagation delay difference
between any two parts or channels
Pulse Width Distortion
Output rise time (10-90%)
Output fall time (90-10%)
Common mode transient immunity
at hight level output
Common mode transient immunity
at low level output
*: All typical values are at Ta
I
I
F
F
Characteristics
Test Circuit 1: I
Test Circuit 3: V
1
3
1
3
L
H
L
H
H
H
L
L
25°C
OPH
OH
(Ta
(t
4
4
6
6
pHL
Symbol
PWD
CM
CM
t
t
t
t
tpsk
pLH
pHL
pLH
pHL
t
t
-t
V
r
f
A
V
pLH)
H
L
OH
V6-5
I
40 to 100°C, unless otherwise specified)
OPH
Circuit
Test
7
8
V
V
CC
CC
V
R
C
f=250kHz
Duty Cycle
V
1000Vp-p
V
Ta
CC
g
g
CM
CC
=50%
4
30
1 nF
25°C
20 V
20 V
Test Condition
V
F
Ta= -40 to100℃
Ta= -40 to100℃
Ta= -40 to100℃
Ta= -40 to100℃
I
I
V
I
V
Test Circuit 2: I
Test Circuit 4: V
I
F
F
F
I
I
I
I
F
F
O (min)
O (max)
F
F
F
I
I
Ta= 25 ℃
3
F
F
1
1
3
Ta= 25℃
10
10 mA
0 mA
0
10
0→10 mA
0→10 mA
10→0 mA
10 mA
10 mA
10 mA
0 mA
16 V
0 mA
1 V
10000
10000
Min
-90
-65
70
70
50
50
OPL
OL
4
4
6
6
I
Typ.*
OPL
V
105
A
V
95
OL
V5-4
2004-10-19
Max
170
170
200
200
90
65
TLP705
V
V
CC
CC
V/ s
Unit
ns
Datasheet pdf - http://www.DataSheet4U.net/