TLP722 Toshiba Semiconductor, TLP722 Datasheet

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TLP722

Manufacturer Part Number
TLP722
Description
Photocoupler Photo−Diode
Manufacturer
Toshiba Semiconductor
Datasheet
The TOSHIBA TLP722 consists of a photo−diode optically coupled to a
gallium arsenide infrared emitting diode in a four lead plastic DIP
(DIP4).
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TENTATIVE
TLP722: Single circuit
Cathode−anode voltage: 30V (max)
Current transfer ratio: 0.1% (min)
Input / output isolation voltage: 4000V
Operating temperature range: −55~100°C
Storage temperature range: −55~125°C
UL recognized: UL1577, E67349
VDE approved: VDE0884
(Note): When a VDE0884 approved type is needed,
SEMKO approved product: SS EN60950,
Construction mechanical rating
Creepage distance
Clearance
Insulation thickness
Maximum operating insulation voltage: 890V
Maximum permissible over voltage: 8000V
please designate the “ Option (D4) ”
TLP722 type
7.0 mm
7.0 mm
0.4 mm
approved No. 9808324 / 01
TOSHIBA Photocoupler Photo−Diode
rms
TLP722F type
8.0 mm
8.0 mm
0.4 mm
TLP722
(min)
PK
PK
1
Weight: 0.28 g
Pin Configuration
(top view)
TOSHIBA
11−5B2
2002-09-25
TLP722
Unit in mm

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TLP722 Summary of contents

Page 1

... TENTATIVE The TOSHIBA TLP722 consists of a photo−diode optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP (DIP4). TLP722: Single circuit Cathode−anode voltage: 30V (max) · Current transfer ratio: 0.1% (min) · Input / output isolation voltage: 4000V · ...

Page 2

... V 10 ― ― 10 Min Typ. Max ― 0 1×10 10 4000 ― ― 10000 ― 10000 2002-09-25 TLP722 Unit V 10 µA ― pF ― V ― µA 50 µA ― pF Unit ― pF ― Ω ― V rms ― ...

Page 3

... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 3 TLP722 000707EBC 2002-09-25 ...

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