BAT754S NXP Semiconductors, BAT754S Datasheet - Page 4

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BAT754S

Manufacturer Part Number
BAT754S
Description
Schottky Barrier Double Diodes
Manufacturer
NXP Semiconductors
Datasheet

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Philips Semiconductors
GRAPHICAL DATA
2003 Mar 25
handbook, halfpage
handbook, halfpage
Schottky barrier (double) diodes
(1) T
(2) T
(3) T
Fig.6
f = 1 MHz; T
Fig.8
(mA)
I F
10
(pF)
C d
10
10
10
15
10
1
0
amb
amb
amb
5
3
2
1
0
0
(1)
= 125 C.
= 85 C.
= 25 C.
Forward current as a function of forward
voltage; typical values.
Diode capacitance as a function of reverse
voltage; typical values.
amb
(2)
= 25 C.
(3)
10
0.4
(1)
(2)
0.8
20
(3)
V F (V)
V R (V)
MSA891
MSA892
1.2
30
4
(1) T
(2) T
(3) T
Fig.7
( A)
I R
10
10
10
10
amb
amb
amb
3
2
1
1
0
= 125 C.
= 85 C.
= 25 C.
Reverse current as a function of reverse
voltage; typical values.
10
BAT754 series
20
Product specification
V
R
(1)
(2)
(3)
(V)
MSA893
30

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