2SK1167 Hitachi Semiconductor, 2SK1167 Datasheet - Page 6

• Manufacturer Part Number: 2SK1167
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

2SK1167, 2SK1168
6
5,000
2,000
1,000
500
400
300
200
100
500
200
100
0
50
0.2
di/dt = 100 A/ s, Ta = 25°C
V
Pulse Test
Dynamic Input Characteristics
V
GS
Reverse Drain Current I
Body to Drain Diode Reverse
DS
20
0.5
= 0
Gate Charge Qg (nc)
V
250 V
100 V
V
400 V
DD
DD
Recovery Time
1.0
250 V
40
= 400 V
= 100 V
2
60
V
GS
5
I
D
DR
80
= 15 A
(A)
10
100
20
20
16
12
8
4
0
10,000
1,000
1,000
500
200
100
100
50
20
10
10
0.5
0
V
PW = 2 s, duty < 1%
GS
Drain to Source Voltage V
1.0
vs. Drain to Source Voltage
= 10 V, V
Switching Characteristics
10
Drain Current I
Typical Capacitance
2
t
t
d (off)
d (on)
20
DD
5
30 V
t
r
30
Coss
Crss
D
Ciss
10
(A)
t
f
V
f = 1 MHz
20
DS
GS
40
= 0
(V)
50
50