2SK1301 Hitachi Semiconductor, 2SK1301 Datasheet - Page 5

• Manufacturer Part Number: 2SK1301
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

2.5
2.0
1.5
1.0
0.5
0
0
0.5
0.4
0.3
0.2
0.1
–40
0
Drain to Source Saturation Voltage
Gate to Source Voltage V
vs. Gate to Source Voltage
Static Drain to Source on State
2
Pulse Test
Resistance vs. Temperature
Case Temperature T
V
0
GS
V
GS
= 10 V
4
= 4 V
40
I
6
D
Pulse Test
80
= 5 A
20 A
10 A
GS
C
I
8
D
(°C)
120
(V)
= 20 A
10 A
10 A
20 A
5 A
5 A
10
160
0.005
0.5
50
10
20
0.05
0.02
0.01
5
2
1
0.5
0.2
0.1
0.2
V
Pulse Test
1
DS
Pulse Test
Forward Transfer Admittance
= 10 V
0.5
Static Drain to Source on State
2
Resistance vs. Drain Current
Drain Current I
vs. Drain Current
Drain Current I
1.0
5
T
V
C
GS
–25°C
2
= 25°C
75°C
10
= 4 V
D
20
5
D
(A)
(A)
10 V
10
2SK1301
50
20
100
5