2SK1303 Hitachi Semiconductor, 2SK1303 Datasheet - Page 5

• Manufacturer Part Number: 2SK1303
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

5
4
3
2
1
0
0.20
0.16
0.12
0.08
0.04
Drain to Source Saturation Voltage
Gate to Source Voltage V
0
–40
vs. Gate to Source Voltage
2
Pulse Test
V
Static Drain to Source on State
Resistance vs. Temperature
GS
Case Temperature T
4
0
= 4 V
40
6
V
GS
Pulse Test
= 10 V
I
I
GS
D
D
10 A
80
8
= 20 A
= 50 A
(V)
20 A
10 A
C
10 A
(°C)
120
10
20 A
50 A
160
0.005
1.0
0.5
50
20
10
0.05
0.02
0.01
5
2
0.5
0.2
0.1
2
1.0
Forward Transfer Admittance
Pulse Test
Static Drain to Source on State
Resistance vs. Drain Current
5
Drain Current I
2
Drain Current I
vs. Drain Current
10
V
GS
5
20
= 4 V
10
D
V
Pulse Test
D
(A)
T
–25°C
75°C
GS
50
C
(A)
= 25°C
20
= 10 V
10 V
2SK1303
100
50
200
5