2SK1335L Hitachi Semiconductor, 2SK1335L Datasheet - Page 5

• Manufacturer Part Number: 2SK1335L
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

1,000
500
200
100
500
400
300
200
100
50
20
10
0
0.05
V
di/dt = 50 A/ s, V
Ta = 25°C
Pulse Test
DS
0.1
Reverse Drain Current I
Dynamic Input Characteristics
Body to Drain Diode Reverse
V
V
4
DD
Gate Charge Qg (nc)
DD
0.2
= 50 V
100 V
150 V
= 150 V
Recovery Time
100 V
50 V
8
0.5
GS
V
GS
= 0
12
1
DR
16
I
D
2
(A)
= 3 A
20
5
20
16
12
8
4
0
1,000
100
500
200
100
10
50
20
10
1
5
0.05
0
V
Pulse Test
Drain to Source Voltage V
GS
0.1
2SK1335(L), 2SK1335(S)
= 10V
10
Switching Characteristics
Drain to Source Voltage
Typical Capacitance vs.
t
Drain Current I
r
0.2
20
V
PW = 2 s, duty < 1%
GS
0.5
t
d (off)
= 10 V V
t
Ciss
Coss
Crss
f
30
D
1
t
d (on)
(A)
DS
DD
40
2
= 30 V
•
(V)
•
50
3
5