2SK1957 Hitachi Semiconductor, 2SK1957 Datasheet - Page 5

• Manufacturer Part Number: 2SK1957
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

2.0
1.6
1.2
0.8
0.4
1.0
0.8
0.6
0.4
0.2
0
0
–40
Drain to Source Saturation Voltage
Gate to Source Voltage V
Static Drain to Source on State
vs. Gate to Source Voltage
Pulse Test
Resistance vs. Temperature
Case Temperature T (°C)
4
0
8
40
I = 5 A
D
12
80
I = 1A
Pulse Test
D
2 A
1 A, 2 A
C
GS
5 A
16
120
(V)
20
160
0.5
50
20
10
0.5
0.2
0.1
10
5
2
1
0.1
5
2
1
0.5
Forward Transfer Admittance
Pulse Test
0.2
Static Drain to Source on State
V
Pulse Test
Resistance vs. Drain Current
1
DS
Drain Current I
–25°C
Drain Current I
vs. Drain Current
= 10 V
Tc = 25°C
0.5
2
1
5
V
GS
D
2
10
D
(A)
= 10 V
75°C
(A)
2SK1957
20
5
15 V
10
50
5