2SK3055 NEC, 2SK3055 Datasheet

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2SK3055

Manufacturer Part Number
2SK3055
Description
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Manufacturer
NEC
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
2SK3055
Manufacturer:
FSC
Quantity:
20 000
Document No.
Date Published
Printed in Japan
ABSOLUTE MAXIMUM RATINGS (T
DESCRIPTION
designed for high current switching applications.
FEATURES
Drain to Source Voltage
Gate to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1. PW
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
This product is N-Channel MOS Field Effect Transistor
Low On-State Resistance
R
R
Low C
Built-in Gate Protection Diode
Isolated TO-220 package
DS(on)1
DS(on)2
2. Starting T
iss
D13094EJ1V0DS00 (1st edition)
March 1999 NS CP(K)
= 34 m
= 50 m
: C
iss
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
= 920 pF TYP.
10 s, Duty cycle
MAX. (V
MAX. (V
ch
Note1
= 25 °C, R
Note2
Note2
C
A
GS
GS
= 25°C)
= 25°C)
= 10 V, I
= 4.0 V, I
G
N-CHANNEL POWER MOS FET
= 25
1 %
D
D
= 15 A)
A
= 15 A)
V
V
V
= 25 °C)
R
R
I
GS
INDUSTRIAL USE
D(pulse)
GSS(AC)
GSS(DC)
I
V
th(ch-C)
D(DC)
T
E
th(ch-A)
T
I
P
P
DSS
AS
stg
AS
ch
= 20 V
DATA SHEET
T
T
SWITCHING
–55 to +150
0 V
+20, 10
MOS FIELD EFFECT TRANSISTOR
±100
22.5
62.5
±20
±30
150
2.0
5.0
60
25
15
ORDERING INFORMATION
PART NUMBER
°C/W
°C/W
mJ
2SK3055
°C
°C
W
W
V
V
V
A
A
A
2SK3055
Isolated TO-220
©
PACKAGE
1997,1999

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2SK3055 Summary of contents

Page 1

... DSS V ±20 V GSS(AC) V +20 GSS(DC) I ±30 A D(DC) I ±100 A D(pulse 2 150 ° –55 to +150 °C stg 22 5.0 °C/W th(ch-C) R 62.5 °C/W th(ch-A) 2SK3055 PACKAGE Isolated TO-220 © 1997,1999 ...

Page 2

... F(S- di/dt = 100 TEST CIRCUIT 2 SWITCHING TIME D.U. PG Duty Cycle 1 % Data Sheet D13094EJ1V0DS00 2SK3055 MIN. TYP. MAX. UNIT 1.0 1.6 2 ±10 A 920 pF 280 pF 120 300 ...

Page 3

... Pulsed Data Sheet D13094EJ1V0DS00 2SK3055 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 100 120 140 160 T - Case Temperature - ˚C C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed ...

Page 4

... DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed 50 25 100 0 V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE Pulsed 2.0 1.5 1.0 0.5 0 1000 50 T Data Sheet D13094EJ1V0DS00 2SK3055 R = 62.5 ˚C/W th(ch- 5.0 ˚C/W th(ch- 25˚C C Single Pulse 10 100 1 000 Pulsed Gate to Source Voltage - ...

Page 5

... SWITCHING CHARACTERISTICS 10 000 = 000 C iss 100 C oss C rss 10 100 0.1 I DYNAMIC INPUT/OUTPUT CHARACTERISTICS 100 Data Sheet D13094EJ1V0DS00 2SK3055 Pulsed 1.5 1 d(off) t d(on 100 - Drain Current - ...

Page 6

... Starting Tch = 25 ˚C 0.1 10 100 Inductive Load - H 6 SINGLE AVALANCHE ENERGY DERATING FACTOR 160 140 120 100 Starting Tch - Starting Channel Temperature - Data Sheet D13094EJ1V0DS00 2SK3055 100 125 150 ˚C ...

Page 7

... The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 0.2 2.7 0.2 ± EQUIVALENT CIRCUIT Gate (G) Gate Protection Diode 2.5 0.1 ± 0.1 ± Data Sheet D13094EJ1V0DS00 2SK3055 Drain (D) Body Diode Source (S) 7 ...

Page 8

... The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. 2SK3055 M7 98. 8 ...

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