2SK3135L Hitachi Semiconductor, 2SK3135L Datasheet - Page 6

• Manufacturer Part Number: 2SK3135L
• Description: Silicon N Channel MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

2SK3135(L),2SK3135(S)
6
1000
500
200
100
100
50
20
10
80
60
40
20
0.1
0
I
Reverse Drain Current
D
0.3
Dynamic Input Characteristics
= 75 A
Body–Drain Diode Reverse
80
Gate Charge
Recovery Time
V
1
DD
160
= 50 V
di / dt = 50 A / µs
V
3
25 V
10 V
GS
V
240
= 0, Ta = 25 °C
DD
V
Qg (nc)
GS
10
= 50 V
I
DR
25 V
10 V
320
V
30
CE
(A)
400
100
20
16
12
8
4
0
30000
10000
3000
1000
1000
100
100
300
200
500
20
10
50
0.1 0.2
0
Drain to Source Voltage V
10
Typical Capacitance vs.
Drain to Source Voltage
0.5
Switching Characteristics
Drain Current
1
V
PW = 5 µs, duty < 1 %
20
GS
t f
Coss
Ciss
Crss
= 10 V, V
2
r t
30
5
t
I
d(off)
10
D
t
d(on)
(A)
V
f = 1 MHz
DD
20
DS
40
GS
= 30 V
= 0
(V)
50
100
50