2SK3506 Toshiba Semiconductor, 2SK3506 Datasheet
2SK3506
Manufacturer Part Number
2SK3506
Description
Silicon N Channel MOS Type Relay Drive and DC-DC Converter Applications
Manufacturer
Toshiba Semiconductor
Datasheet
1.2SK3506.pdf
(3 pages)
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Part Number:
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Manufacturer:
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Relay Drive and DC-DC Converter Applications
Motor Drive Applications
•
•
•
•
Absolute Maximum Ratings
Thermal Characteristics
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement model: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 78 μH, IAR = 45 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
GS
DC
Pulse (Note 1)
= 20 kΩ)
DSS
th
= 1.5 to 3.0 V (V
(Note 1)
(Note 2)
= 100 μA (max) (V
DS (ON)
(Ta = 25°C)
Symbol
V
V
V
fs
E
E
T
I
I
T
DGR
GSS
P
DSS
I
DP
AR
AR
stg
| = 26 S (typ.)
AS
D
ch
R
R
D
2SK3506
Symbol
th (ch-c)
th (ch-a)
DS
= 16 mΩ (typ.)
DS
= 10 V, I
= 30 V)
−55 to150
Rating
±20
135
100
220
150
30
30
45
45
10
D
1
1.25
Max
= 1 mA)
50
Unit
mJ
mJ
°C/W
°C/W
°C
°C
W
Unit
V
V
V
A
A
Weight: 4.6 g (typ.)
JEDEC
JEITA
TOSHIBA
2-16C1B
SC-65
2006-11-16
―
2SK3506
Unit: mm
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2SK3506 Summary of contents
Page 1
... GSS (Note 135 DP P 100 D E 220 AS (Note 150 ch −55 to150 T stg Symbol Max R 1.25 th (ch- (ch-a) 1 2SK3506 Unit JEDEC ― W JEITA SC-65 mJ TOSHIBA 2-16C1B A Weight: 4.6 g (typ.) mJ °C °C Unit °C/W °C/W 2006-11-16 Unit: mm ...
Page 2
... DSF / A/μ Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2SK3506 Min Typ. Max ⎯ ⎯ ±10 ⎯ ⎯ 100 ⎯ ⎯ 30 ⎯ 1.5 3.0 ⎯ ⎯ ⎯ ...
Page 3
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 3 2SK3506 20070701-EN 2006-11-16 ...