2SK3669 Toshiba Semiconductor, 2SK3669 Datasheet

2SK3669

Manufacturer Part Number

2SK3669

Description

Silicon N-Channel MOS Type Switching Regulator

Manufacturer

Toshiba Semiconductor

Datasheet

1.2SK3669.pdf (6 pages)

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Switching Regulator, Audio Amplifier and Motor Drive

Applications

•

Absolute Maximum Ratings

Thermal Characteristics

Low drain-source ON-resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode : V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single-pulse avalanche energy

Avalanche current

Repetitive avalanche energy

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristic

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VII)

Characteristics

= 50 V, T

Pulse (t

DSS

= 20 kΩ)

≤ 10 ms)

≤ 1 ms)

= 25°C (initial), L = 3.44 mH, I

= 3.0 to 5.0 V (V

(Note 2)

(Note 3)

(Note 1)

= 100 μA (max) (V

DS (ON)

(Ta = 25°C)

| = 6 S (typ.)

Symbol

IDP

DGR

DSS

GSS

stg

2SK3669

= 95 mΩ (typ.)

Symbol

= 10 V, I

th (ch−c)

th (ch−a)

= 100 V)

−55 to 150

Rating

100

±20

280

150

= 1 mA)

Max

6.25

125

= 10 A, R

°C/ W

Unit

°C

= 25 Ω

Weight: 0.36 g (typ.)

JEDEC

JEITA

TOSHIBA

2-7J1B

2006-11-20

―

2SK3669

Unit: mm

Related parts for 2SK3669

2SK3669 Summary of contents

Page 1

... (Note 3) T 150 ch −55 to 150 T stg Symbol Max R 6.25 th (ch−c) R 125 th (ch−a) = 25°C (initial 3.44 mH 2SK3669 Unit JEDEC ― W JEITA ― TOSHIBA 2-7J1B mJ Weight: 0.36 g (typ °C °C Unit °C/ W ° Ω G ...

Page 2

... Test Condition Min Typ. ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ GS ⎯ ⎯ 90 2SK3669 Max Unit ±100 nA μA 100 ⎯ V 5.0 V 125 mΩ ⎯ S ⎯ ⎯ pF ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ ...

Page 3

... Drain-source voltage V ( – 2.0 Common source Tc = 25°C Pulse test 1.6 1 0.8 100 5 0.4 2 Gate-source voltage V ( – (ON Common source 25°C Pulse test 1 0.5 0 0.1 15 0.05 0.03 0.01 0 Drain current I (A) D 2006-11-20 2SK3669 10 20 100 ...

Page 4

... DS (ON 2 120 160 DS C iss C oss C rss 100 300 ( – 120 160 4 2SK3669 I – 100 Common source Tc = 25° − Pulse test 0.1 0 0.5 1 1.5 2 Drain-source voltage V ( – ...

Page 5

... Channel temperature (initial) T (° VDSS − Test circuit Waveform ⎛ B VDSS = 25 Ω 1 ⎜ ⋅ ⋅ ⋅ Ε AS ⎜ VDSS = 3.44 mH ⎝ 2SK3669 150 DS ⎞ ⎟ ⎟ − ⎠ 2006-11-20 ...

Page 6

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SK3669 20070701-EN 2006-11-20 ...

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