2SK3669 Toshiba Semiconductor, 2SK3669 Datasheet
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2SK3669
Related parts for 2SK3669
2SK3669 Summary of contents
Page 1
... (Note 3) T 150 ch −55 to 150 T stg Symbol Max R 6.25 th (ch−c) R 125 th (ch−a) = 25°C (initial 3.44 mH 2SK3669 Unit JEDEC ― W JEITA ― TOSHIBA 2-7J1B mJ Weight: 0.36 g (typ °C °C Unit °C/ W ° Ω G ...
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... Test Condition Min Typ. ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ GS ⎯ ⎯ 90 2SK3669 Max Unit ±100 nA μA 100 ⎯ V 5.0 V 125 mΩ ⎯ S ⎯ ⎯ pF ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ ...
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... Drain-source voltage V ( – 2.0 Common source Tc = 25°C Pulse test 1.6 1 0.8 100 5 0.4 2 Gate-source voltage V ( – (ON Common source 25°C Pulse test 1 0.5 0 0.1 15 0.05 0.03 0.01 0 Drain current I (A) D 2006-11-20 2SK3669 10 20 100 ...
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... DS (ON 2 120 160 DS C iss C oss C rss 100 300 ( – 120 160 4 2SK3669 I – 100 Common source Tc = 25° − Pulse test 0.1 0 0.5 1 1.5 2 Drain-source voltage V ( – ...
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... Channel temperature (initial) T (° VDSS − Test circuit Waveform ⎛ B VDSS = 25 Ω 1 ⎜ ⋅ ⋅ ⋅ Ε AS ⎜ VDSS = 3.44 mH ⎝ 2SK3669 150 DS ⎞ ⎟ ⎟ − ⎠ 2006-11-20 ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SK3669 20070701-EN 2006-11-20 ...