2SK3670 Toshiba Semiconductor, 2SK3670 Datasheet
2SK3670
Manufacturer Part Number
2SK3670
Description
Silicon N-Channel MOS Type Chopper Regulator and DC-DC Converter Applications
Manufacturer
Toshiba Semiconductor
Datasheet
1.2SK3670.pdf
(3 pages)
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Part Number:
2SK3670
Manufacturer:
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Quantity:
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Chopper Regulator and DC−DC Converter Applications
Absolute Maximum Ratings
Thermal Characteristics
2.5V-Gate Drive
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain−source voltage
Drain−gate voltage (R
Gate−source voltage
Drain current
Drain power dissipation
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
Thermal resistance, channel to
ambient
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability
test report and estimated failure rate, etc).
DS
Characteristics
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
= 50V、T
DC
Pulse(t≦5s)
Pulse
GS
= 20 kΩ)
ch
DSS
th
= 25℃(initial)、L = 135mH、I
= 0.5~1.3 V (V
(Note 1)
(Note 1)
(Note 1)
(Note 2)
= 100 μA (max) (V
DS (ON)
(Ta = 25°C)
R
Symbol
Symbol
th (ch−a)
V
fs
V
V
E
E
T
I
I
I
T
P
DGR
GSS
DSS
DS
I
DP
DP
AR
| = 2.1 S (typ.)
stg
AS
AS
D
ch
2SK3670
D
= 10 V, I
= 1.0 Ω (typ.)
DS
= 150 V)
−55~150
D
Rating
0.67
0.67
0.09
AR
150
150
±12
150
Max
0.9
138
41
=200μA)
1
3
1
= 0.67A、R
°C / W
Unit
m J
m J
Unit
°C
°C
W
V
V
V
A
A
G
= 25Ω
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
3
TO-92MOD
2-5J1C
2007-07-24
—
2SK3670
2
1
Unit: mm
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2SK3670 Summary of contents
Page 1
... AS (Note 150 ch T −55~150 stg Symbol Max R 138 th (ch−a) = 25℃(initial)、L = 135mH、I = 0.67A、 2SK3670 Unit JEDEC TO-92MOD m J JEITA — A TOSHIBA 2-5J1C m J Weight: 0.36 g (typ.) °C °C 2 Unit 3 ° 25Ω ...
Page 2
... — 2.9 — 1.7 Min Typ. — — — — — — — — — — — — 95 — 110 2SK3670 Max Unit ±10 μA 100 μA — Ω 1.7 — S — pF — — — — ns — — — ...
Page 3
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 3 2SK3670 20070701-EN 2007-07-24 ...