SI4933DY Vishay Siliconix, SI4933DY Datasheet - Page 2

• Manufacturer Part Number: SI4933DY
• Description: Dual P-Channel 12-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

Si4933DY
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
30
24
18
12
b
6
0
0
Parameter
a
a
V
1
V
GS
DS
a
Output Characteristics
= 5 thru 2 V
- Drain-to-Source Voltage (V)
a
J
2
= 25_C UNLESS OTHERWISE NOTED)
3
Symbol
V
r
I
DS(on)
DS(on)
t
I
t
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
DSS
g
Q
t
SD
t
t
rr
fs
gs
gd
r
f
g
1.5 V
4
1 V
New Product
V
5
I
V
D
DS
DS
^ -1 A, V
= 6 V, V
I
F
V
= -9.6 V, V
V
V
V
V
V
V
GS
= -1.7 A, di/dt = 100 A/ms
DS
GS
GS
I
DS
DS
V
DS
S
Test Condition
V
V
DS
= -1.7 A, V
DD
DD
= -4.5 V, I
= V
= -5 V, V
= -2.5 V, I
= -1.8 V, I
= -10 V, I
= -9.6 V, V
= 0 V, V
GS
= 6 V, R
= 6 V, R
GEN
GS
GS
= -4.5 V, I
, I
= -4.5 V, R
D
GS
= 0 V, T
GS
D
= -500 mA
D
D
D
GS
L
L
GS
= -9.8 A
= 6 W
= 6 W
= -4.5 V
= -8.9 A
= -5.0 A
= -9.8 A
= "8 V
= 0 V
= 0 V
D
J
30
24
18
12
= -9.8 A
G
6
0
= 55_C
0.0
= 6 W
0.4
V
GS
Transfer Characteristics
-0.40
Min
-30
25_C
- Gate-to-Source Voltage (V)
T
C
= 125_C
0.8
0.0115
0.014
0.018
Typ
-0.7
320
260
210
6.0
40
46
13
35
47
S-22122—Rev. B, 25-Nov-02
1.2
Document Number: 71980
-55 _C
"100
Max
0.014
0.017
0.022
-1.0
-1.2
480
390
315
-1
-5
70
55
70
1.6
Unit
nA
m
mA
nC
ns
V
A
W
S
V
2.0