SI4933DY Vishay Siliconix, SI4933DY Datasheet - Page 3

• Manufacturer Part Number: SI4933DY
• Description: Dual P-Channel 12-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

Document Number: 71980
S-22122—Rev. B, 25-Nov-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.030
0.025
0.020
0.015
0.010
0.005
0.000
30
10
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
0.2
= 9.8 A
On-Resistance vs. Drain Current
= 6 V
10
6
V
V
SD
GS
Q
T
0.4
g
J
= 1.8 V
- Source-to-Drain Voltage (V)
= 150_C
I
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
12
20
0.6
0.8
T
18
30
J
= 25_C
V
GS
1.0
= 2.5 V
V
GS
24
40
= 4.5 V
1.2
1.4
30
50
New Product
0.030
0.025
0.020
0.015
0.010
0.005
0.000
6000
5000
4000
3000
2000
1000
1.6
1.4
1.2
1.0
0.8
0.6
0
-50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
I
D
V
I
-25
D
GS
= 3 A
C
= 9.8 A
rss
2
= 4.5 V
1
T
V
V
0
J
GS
DS
- Junction Temperature (_C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
4
25
Capacitance
2
Vishay Siliconix
50
C
C
6
I
D
oss
iss
= 9.8 A
3
75
8
Si4933DY
100
www.vishay.com
4
10
125
150
12
5
3