SI4944DY Vishay Siliconix, SI4944DY Datasheet - Page 2

• Manufacturer Part Number: SI4944DY
• Description: Dual N-Channel 30-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

Si4944DY
Vishay Siliconix
Notes
a.
b.
www.vishay.com
MOSFET SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
30
24
18
12
b
6
0
0.0
Parameter
a
0.5
a
V
V
GS
DS
a
= 10 thru 5 V
Output Characteristics
− Drain-to-Source Voltage (V)
1.0
a
a
1.5
Symbol
2.0
J
V
r
r
I
DS(on)
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
R
= 25_C UNLESS OTHERWISE NOTED)
t
t
SD
t
rr
fs
gs
gd
r
f
g
g
2.5
4 V
3 V
New Product
3.0
V
V
DS
I
D
DS
^ 1 A, V
= 15 V, V
I
F
V
= 30 V, V
V
V
V
V
V
V
V
V
DS
= 1.9 A, di/dt = 100 A/ms
GS
DS
I
DS
DS
Test Condition
GS
S
DS
DD
DD
= 1.9 A, V
= 0 V, V
= 10 V, I
= V
w 5 V, V
= 10 V, I
= 4.5 V, I
= 30 V, V
= 15 V, R
= 15 V, R
GEN
f = 1 MHz
GS
GS
GS
, I
= 4.5 V, I
= 10 V, R
GS
= 0 V, T
D
D
GS
D
GS
D
GS
L
L
= 250 mA
= 12.2 A
= "20 V
= 12.2 A
= 9.4 A
= 15 W
= 15 W
= 10 V
= 0 V
= 0 V
J
D
30
24
18
12
G
6
0
= 85_C
= 12.2 A
0.0
= 6 W
0.5
V
1.0
GS
Transfer Characteristics
− Gate-to-Source Voltage (V)
1.5
Min
0.5
30
1
2.0
25_C
T
C
0.0075
0.013
= 125_C
Typ
2.5
13.5
0.8
7.1
4.7
1.0
32
10
10
40
12
45
S-32131—Rev. A, 27-Oct-03
Document Number: 72512
3.0
0.0095
Max
"100
0.016
3.5
1.2
1.7
21
15
15
60
20
70
3
1
5
−55_C
4.0
Unit
nC
nA
mA
mA
ns
W
W
W
V
A
S
V
4.5