SI4944DY Vishay Siliconix, SI4944DY Datasheet - Page 3

• Manufacturer Part Number: SI4944DY
• Description: Dual N-Channel 30-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

Document Number: 72512
S-32131—Rev. A, 27-Oct-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.030
0.024
0.018
0.012
0.006
0.000
10
30
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
0.2
= 12.2 A
On-Resistance vs. Drain Current
= 15 V
5
6
V
SD
Q
0.4
g
T
− Source-to-Drain Voltage (V)
J
I
− Total Gate Charge (nC)
D
10
= 150_C
− Drain Current (A)
V
Gate Charge
12
GS
0.6
= 4.5 V
15
0.8
18
T
20
J
= 25_C
1.0
V
GS
24
= 10 V
25
1.2
1.4
30
30
New Product
2400
1800
1200
0.06
0.05
0.04
0.03
0.02
0.01
0.00
600
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
I
−25
D
D
GS
C
= 12.2 A
= 3 A
rss
= 10 V
2
6
T
V
V
0
J
GS
DS
− Junction Temperature (_C)
− Gate-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
25
Capacitance
12
4
I
D
Vishay Siliconix
C
50
C
= 12.2 A
oss
iss
18
6
75
Si4944DY
100
24
www.vishay.com
8
125
150
10
30
3