SI1912EDH Vishay Siliconix, SI1912EDH Datasheet - Page 3

• Manufacturer Part Number: SI1912EDH
• Description: Dual N-Channel 20-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

Document Number: 71408
S-03176—Rev. A, 05-Mar-01
2.0
1.5
1.0
0.5
0.0
0.6
0.5
0.4
0.3
0.2
0.1
0.0
5
4
3
2
1
0
0.0
0.0
0
V
I
D
DS
V
= 1.13 A
On-Resistance vs. Drain Current
GS
0.3
= 10 V
V
DS
= 1.8 V
0.5
1
Q
g
– Drain-to-Source Voltage (V)
Output Characteristics
I
D
– Total Gate Charge (nC)
V
– Drain Current (A)
Gate Charge
0.6
GS
= 5 thru 2 V
1.0
2
0.9
V
GS
1.5 V
= 2.5 V
1 V
1.5
3
V
GS
1.2
_
= 4.5 V
New Product
2.0
1.5
4
140
120
100
2.0
1.5
1.0
0.5
0.0
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
0
–50
0.0
0
On-Resistance vs. Junction Temperature
C
–25
V
I
D
rss
GS
= 1.13 A
V
V
= 4.5 V
4
DS
GS
T
0.5
J
0
Transfer Characteristics
– Junction Temperature (_C)
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
C
oss
Capacitance
25
8
Vishay Siliconix
1.0
50
T
C
Si1912EDH
12
25_C
= –55_C
75
C
iss
100
1.5
www.vishay.com
16
125
125_C
150
2.0
20
3