SI1912EDH Vishay Siliconix, SI1912EDH Datasheet - Page 4

• Manufacturer Part Number: SI1912EDH
• Description: Dual N-Channel 20-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

Si1912EDH
Vishay Siliconix
www.vishay.com
4
–0.0
–0.1
–0.2
–0.3
–0.4
0.01
0.2
0.1
0.1
0.1
2
1
2
1
–50
10
0
–4
Duty Cycle = 0.5
0.2
0.1
0.05
–25
Source-Drain Diode Forward Voltage
Single Pulse
0.2
V
SD
0
– Source-to-Drain Voltage (V)
T
Threshold Voltage
I
0.02
D
J
10
0.4
– Temperature (_C)
= 100 mA
25
–3
T
J
= 150_C
50
0.6
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.8
10
T
100
–2
J
= 25_C
1.0
_
125
Square Wave Pulse Duration (sec)
150
1.2
New Product
10
–1
1
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.01
5
4
3
2
1
0
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
V
1
0.1
GS
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
– Gate-to-Source Voltage (V)
DM
JM
– T
t
2
A
Time (sec)
1
1
= P
t
2
DM
Z
thJA
I
100
thJA
D
t
t
1
2
3
= 1.13 A
(t)
S-03176—Rev. A, 05-Mar-01
10
= 170_C/W
Document Number: 71408
4
600
100
600
5