SI5933DC Vishay Siliconix, SI5933DC Datasheet - Page 2

• Manufacturer Part Number: SI5933DC
• Description: Dual P-Channel 1.8-V (G-S) MOSFET
• Manufacturer: Vishay Siliconix

Notes
a.
b.
www.vishay.com
2-2
Si5933DC
Vishay Siliconix
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%.
Guaranteed by design, not subject to production testing.
10
8
6
4
2
0
0.0
b
Parameter
0.5
V
a
a
DS
1.0
Output Characteristics
a
-- Drain-to-Source Voltage (V)
1.5
V
a
J
GS
= 25_C UNLESS OTHERWISE NOTED)
2.0
= 5 thru 3 V
2.5
Symbol
3.0
V
r
I
DS(on)
DS(on)
t
I
t
I
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
DSS
DSS
g
Q
t
SD
t
t
rr
fs
gs
gd
r
f
g
2.5 V
1.5 V
2 V
3.5
4.0
V
DS
I
V
D
DS
≅ --1 A, V
= --10 V, V
I
V
F
V
= --16 V, V
V
V
V
V
V
V
DS
V
GS
= --0.9 A, di/dt = 100 A/ms
GS
I
DS
DS
V
S
DS
DD
DD
Test Condition
GS
DS
= --0.9 A, V
 --5 V, V
= --4.5 V, I
= V
= --2.5 V, I
= --10 V, I
= --16 V, V
= --10 V, R
= --10 V, R
= --1.8 V, I
= 0 V, V
GEN
GS
GS
GS
, I
= --4.5 V, I
= --4.5 V, R
D
= 0 V, T
GS
GS
D
= --250 mA
D
D
GS
GS
D
L
L
= --2.7 A
= --2.2 A
= --2.7 A
= --4.5 V
= 10 Ω
= 10 Ω
= --1 A
= 8 V
= 0 V
= 0 V
J
10
D
= 85_C
G
8
6
4
2
0
= --2.7 A
0.0
= 6 Ω
0.5
V
GS
Transfer Characteristics
--0.45
Min
--10
-- Gate-to-Source Voltage (V)
1.0
1.5
0.095
0.137
0.205
Typ
--0.8
0.65
4.4
1.4
16
30
30
27
20
7
S-21251—Rev. B, 05-Aug-02
T
25_C
Document Number: 71238
C
= --55_C
2.0
100
Max
0.110
0.160
0.240
--1.2
6.5
--1
--5
25
45
45
40
40
2.5
125_C
Unit
nA
mA
mA
nC
ns
Ω
V
A
S
V
3.0