SI5933DC Vishay Siliconix, SI5933DC Datasheet - Page 3

• Manufacturer Part Number: SI5933DC
• Description: Dual P-Channel 1.8-V (G-S) MOSFET
• Manufacturer: Vishay Siliconix

Document Number: 71238
S-21251—Rev. B, 05-Aug-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
0.2
= 2.7 A
On-Resistance vs. Drain Current
= 10 V
2
1
V
SD
Q
T
0.4
g
J
-- Source-to-Drain Voltage (V)
I
= 150_C
V
D
-- Total Gate Charge (nC)
GS
-- Drain Current (A)
V
Gate Charge
= 1.8 V
4
2
GS
0.6
= 2.5 V
0.8
6
3
1.0
T
V
J
GS
= 25_C
8
4
= 4.5 V
1.2
1.4
10
5
800
600
400
200
0.4
0.3
0.2
0.1
0.0
1.6
1.4
1.2
1.0
0.8
0.6
0
--50
0
0
On-Resistance vs. Gate-to-Source Voltage
C
On-Resistance vs. Junction Temperature
rss
V
I
D
--25
GS
= 2.7 A
= 4.5 V
1
4
T
V
V
0
J
GS
DS
C
-- Junction Temperature (_C)
oss
C
-- Gate-to-Source Voltage (V)
-- Drain-to-Source Voltage (V)
iss
25
Capacitance
2
8
Vishay Siliconix
50
I
D
= 2.7 A
12
3
75
Si5933DC
100
www.vishay.com
16
4
125
150
20
5
2-3