SI5935DC-T1 Vishay Siliconix, SI5935DC-T1 Datasheet - Page 2

• Manufacturer Part Number: SI5935DC-T1
• Description: Dual P-Channel 1.8-V (G-S) MOSFET
• Manufacturer: Vishay Siliconix

Notes
a.
b.
www.vishay.com
2
Si5935DC
Vishay Siliconix
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
15
12
9
6
3
0
0
b
Parameter
1
V
a
a
DS
Output Characteristics
a
- Drain-to-Source Voltage (V)
V
GS
2
a
J
= 5 thru 3 V
= 25_C UNLESS OTHERWISE NOTED)
3
Symbol
V
r
I
DS(on)
DS(on)
t
I
t
I
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
DSS
DSS
g
Q
t
SD
t
t
4
rr
fs
gs
gd
r
f
g
2.5 V
1.5 V
2 V
1 V
5
New Product
V
I
V
D
DS
DS
^ - 1 A, V
= - 10 V, V
I
V
F
= - 16 V, V
V
V
V
V
V
V
V
DS
V
= - 0.9 A, di/dt = 100 A/ms
GS
GS
I
DS
V
GS
S
DS
DD
DD
Test Condition
DS
DS
p - 5 V, V
= - 0.9 A, V
= V
= - 2.5 V, I
= - 1.8 V, I
= - 4.5 V, I
= - 16 V, V
= - 10 V, R
= - 10 V, R
= - 10 V, I
= 0 V, V
GEN
GS
GS
GS
, I
= - 4.5 V, R
= - 4.5 V, I
D
= 0 V, T
GS
GS
= - 250 mA
D
D
GS
D
GS
L
L
D
= - 2.5 A
= - 0.6 A
= - 4.5 V
= - 3 A
= 10 W
= 10 W
= "8 V
= - 3 A
= 0 V
= 0 V
J
15
12
= 85_C
D
G
9
6
3
0
0.0
= - 3 A
= 6 W
0.5
V
GS
Transfer Characteristics
Min
- 0.4
- 15
- Gate-to-Source Voltage (V)
1.0
1.5
0.069
0.097
0.137
Typ
0.91
- 0.8
5.5
1.6
18
32
42
26
30
8
T
S-31260—Rev. A, 16-Jun-03
25_C
C
Document Number: 72220
= - 55_C
2.0
"100
Max
0.086
0.121
0.171
- 1.2
1.0
8.5
30
50
65
40
60
- 1
- 5
125_C
2.5
Unit
nA
mA
mA
nC
ns
V
A
W
S
V
3.0