SI5935DC-T1 Vishay Siliconix, SI5935DC-T1 Datasheet - Page 4

• Manufacturer Part Number: SI5935DC-T1
• Description: Dual P-Channel 1.8-V (G-S) MOSFET
• Manufacturer: Vishay Siliconix

www.vishay.com
4
Si5935DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
0.01
0.1
- 50
2
1
10
-4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
Single Pulse
T
Threshold Voltage
J
- Temperature (_C)
25
10
-3
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 mA
75
10
100
0.01
100
0.1
-2
10
1
0.1
125
r
DS(on)
Square Wave Pulse Duration (sec)
Single Pulse
T
150
C
Limited
V
New Product
Limited
I
= 25_C
D(on)
DS
10
Safe Operating Area
- Drain-to-Source Voltage (V)
-1
1
BV
DSS
Limited
I
1
DM
10
50
40
30
20
10
Limited
0
10
-4
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
10
-3
100
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
10
DM
JM
-2
Single Pulse Power
- T
t
A
Time (sec)
1
10
= P
t
2
-1
DM
Z
thJA
thJA
100
t
t
S-31260—Rev. A, 16-Jun-03
1
2
1
(t)
Document Number: 72220
= 90_C/W
10
600
100
600