SI6969DQ Vishay Siliconix, SI6969DQ Datasheet - Page 2

• Manufacturer Part Number: SI6969DQ
• Description: Dual P-Channel 1.8-V (G-S) MOSFET
• Manufacturer: Vishay Siliconix

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Si6969DQ
Vishay Siliconix
Notes
a.
b.
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2-2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
b
Parameter
a
a
a
a
J
= 25_C UNLESS OTHERWISE NOTED)
Symbol
V
r
I
DS(on)
DS(on)
t
I
t
GS(th)
I
I
V
D(on)
Q
Q
d(off)
GSS
d(on)
DSS
DSS
Q
g
t
t
SD
t
rr
fs
gs
gd
r
f
g
V
I
V
DS
D
DS
^ - 1 A, V
I
= - 6 V, V
F
= - 9.6 V, V
V
V
V
V
V
V
= - 1.25 A, di/dt = 100 A/ms
I
DS
V
V
GS
GS
GS
S
DS
DS
V
V
DS
Test Condition
DS
= - 1.25 A, V
DD
DD
w - 8 V, V
= - 4.5 V, I
= - 2.5 V, I
= - 1.8 V, I
= V
= - 9.6 V, V
= 0 V, V
= - 8 V, I
= - 6 V, R
= - 6 V, R
GEN
GS
GS
GS
, I
= - 4.5 V, I
= - 4.5 V, R
D
GS
= 0 V, T
D
GS
= - 250 mA
D
D
D
= - 4.6 A
GS
GS
L
L
= - 3.8 A
= - 3.0 A
= "8 V
= - 4.6 A
= - 4.5 V
= 6 W
= 6 W
= 0 V
= 0 V
D
J
G
= 70_C
= - 4.6 A
= 6 W
Min
- 0.45
- 30
0.027
0.037
0.053
Typ
- 0.68
4.5
3.5
18
21
25
35
80
40
50
S-59527—Rev. A, 19-Oct-98
Document Number: 70828
"100
Max
0.034
0.050
0.075
- 1.1
150
100
- 25
40
50
60
80
- 1
Unit
nA
mA
mA
nC
ns
W
V
A
S
V