SI6969DQ Vishay Siliconix, SI6969DQ Datasheet - Page 4

• Manufacturer Part Number: SI6969DQ
• Description: Dual P-Channel 1.8-V (G-S) MOSFET
• Manufacturer: Vishay Siliconix

www.DataSheet4U.com
Si6969DQ
Vishay Siliconix
www.vishay.com
2-4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
- 0.1
- 0.2
0.5
0.4
0.3
0.2
0.1
0.0
30
10
0.01
1
0.1
- 50
0.00
2
1
10
-4
- 25
Source-Drain Diode Forward Voltage
0.2
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
V
SD
0
Single Pulse
0.4
- Source-to-Drain Voltage (V)
T
Threshold Voltage
I
D
J
T
= 250 mA
- Temperature (_C)
10
25
J
= 150_C
-3
0.6
50
0.8
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
T
1..0
10
100
J
= 25_C
-2
1.2
125
Square Wave Pulse Duration (sec)
150
1.4
10
-1
1
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
30
25
20
15
10
5
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
V
GS
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
P
2
0.1
DM
- Gate-to-Source Voltage (V)
JM
Single Pulse Power
- T
A
t
1
Time (sec)
= P
t
2
DM
I
D
4
Z
= 4.6 A
thJA
thJA
100
t
t
(t)
1
S-59527—Rev. A, 19-Oct-98
1
2
= 115_C/W
Document Number: 70828
6
600
10
30
8