2SJ401 Toshiba Semiconductor, 2SJ401 Datasheet - Page 2

• Manufacturer Part Number: 2SJ401
• Description: P CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING/ DC-DC CONVERTER/ RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)
• Manufacturer: Toshiba Semiconductor

Electrical Characteristics
Source−Drain Ratings and Characteristics
Marking
Gate leakage current
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Characteristics
Characteristics
J401
Rise time
Turn−on time
Fall time
Turn−off time
(Note 1)
(Note 1)
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
V
(Ta = 25°C)
R
Symbol
Symbol
(BR) DSS
DS (ON)
V
I
I
I
C
|Y
C
C
Q
Q
GSS
DRP
DSS
I
Qrr
V
t
t
Q
DSF
DR
t
off
oss
t
on
rss
t
iss
rr
gs
gd
th
fs
r
f
g
|
V
V
I
V
V
V
V
V
V
I
I
dl
D
DR
DR
GS
DS
DS
GS
GS
DS
DS
DD
DR
= −10 mA, V
= −20 A, V
= −20 A, V
= −60 V, V
= −10 V, I
= −10 V, I
= −10 V, V
≈ −48 V, V
= ±16 V, V
= −4 V, I
= −10 V, I
/ dt = 50 A / μs
2
D
(Ta = 25°C)
D
D
D
GS
GS
Test Condition
Test Condition
GS
DS
GS
= −10 A
GS
GS
= −1 mA
= −10 A
= −10 A
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= −10 V, I
—
—
D
= −20 A
−0.8
−60
Min
Min
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2800
1300
Typ.
Typ.
450
120
—
—
—
—
50
33
20
15
35
25
90
65
25
—
—
—
75
83
2006-11-16
−100
−2.0
Max
Max
±10
−20
−80
1.7
90
45
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2SJ401
Unit
Unit
mΩ
μA
μA
nC
nC
pF
ns
ns
V
V
S
A
A
V