74HCT7030N,112 NXP Semiconductors, 74HCT7030N,112 Datasheet - Page 3

• Manufacturer Part Number: 74HCT7030N,112
• Description: IC 9X64 FIFO REGISTER 3ST 28-DIP
• Manufacturer: NXP Semiconductors
• Series: 74HCTr

Specifications of 74HCT7030N,112

• Package / Case: 28-DIP (0.600", 15.24mm)
• Function: Asynchronous, Synchronous
• Memory Size: 576 (9 x 64)
• Data Rate: 33MHz
• Voltage - Supply: 4.5 V ~ 5.5 V
• Mounting Type: Through Hole
• Logic Family: HCT
• Number Of Circuits: 1
• Maximum Clock Frequency: 36 MHz
• High Level Output Current: - 6 mA
• Low Level Output Current: 6 mA
• Supply Voltage (max): 5.5 V
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Supply Voltage (min): 4.5 V
• Logic Type: CMOS
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Operating Temperature: -
• Access Time: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2901-5; 933798890112

Philips Semiconductors
QUICK REFERENCE DATA
GND = 0 V; T
Notes
1. C
2. For HC the condition is V
ORDERING INFORMATION
See
December 1990
SYMBOL
t
f
C
C
PHL/
max
9-bit x 64-word FIFO register; 3-state
I
P
f
f
C
V
For HCT the condition is V
i
o
“74HC/HCT/HCU/HCMOS Logic Package Information”
CC
PD
= input frequency in MHz
L
t
= output frequency in MHz
(C
PLH
= output load capacitance in pF
P
= supply voltage in V
is used to determine the dynamic power dissipation (P
L
D
= C
V
amb
CC
PD
2
= 25 C; t
PARAMETER
propagation delay
maximum clock frequency
input capacitance
power dissipation capacitance per package
SI and SO
V
f
MR to DIR and DOR
SO to Q
o
CC
) = sum of outputs
2
f
r
i
n
= t
I
I
f
= GND to V
= GND to V
= 6 ns
(C
L
V
CC
2
CC
CC
f
o
) where:
1.5 V
3
.
D
CONDITIONS
C
notes 1 and 2
in W):
L
= 15 pF; V
CC
= 5 V
74HC/HCT7030
HC
21
36
33
3.5
660
TYPICAL
Product specification
HCT
26
40
29
3.5
660
UNIT
ns
ns
MHz
pF
pF