TPC6002 Toshiba Semiconductor, TPC6002 Datasheet - Page 4

• Manufacturer Part Number: TPC6002
• Description: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
• Manufacturer: Toshiba Semiconductor

1000
300
100
2.5
1.5
0.5
60
50
40
30
20
10
30
10
-80
0
0.1
2
1
0
0
V GS = 4.5 V
Common source
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
(1) t = 5 s
(1) DC
(2) t = 5 s
(2) DC
-40
0.3
Drain-source voltage V
Ambient temperature Ta (
Ambient temperature Ta (°C)
V GS = 10 V
I D = 6 A, 3 A, 1.5 A
40
Capacitance – V
0
1
R
DS (ON)
P
D
40
80
3
– Tc
(1) Device mounted on a
(2) Device mounted on a
– Ta
I D = 6 A, 3 A, 1.5 A
glass-epoxy board (a)
(Note 2a)
glass-epoxy board (b)
(Note 2b)
10
80
DS
DS
120
°
(V)
C)
120
30
C oss
C iss
C rss
160
100
160
4
100
0.3
0.1
2.5
1.5
0.5
30
10
40
30
25
20
15
10
35
-80
3
1
3
2
1
0
5
0
0
0
6 V
12 V
Common source
I D = 6 A
Ta = 25°C
Pulse test
V DD = 24 V
Common source
Ta = 25°C
Pulse test
Dynamic input/output characteristics
-0.2
-40
4
Drain-source voltage V
Ambient temperature Ta (°C)
Total gate charge Q
10 V
1 V
-0.4
V DS
0
8
I
DR
6 V
V
th
-0.6
5 V
– V
40
12
– Ta
V GS
DS
V GS = 0 V
12 V
-0.8
g
80
16
3 V
DS
Common source
V DS = 10 V
I D = 1 mA
Pulse test
(nC)
V DD = 24 V
(V)
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120
-1
20
2001-11-07
TPC6002
-1.2
160
24
16
14
12
10
8
6
4
2
0